Transfer method, method of manufacturing thin film devices, method of maufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, IC card, and electronic appliance

ABSTRACT

A transfer method comprising a step of forming a plurality of transferred bodies on a transfer origin substrate, and a step of applying energy to partial regions corresponding to the transferred bodies to be transferred, and transferring these transferred bodies corresponding to the partial regions onto a transfer destination substrate. A plurality of transferred bodies such as devices or circuits that are to be disposed on a transfer destination substrate with spaces therebetween can be manufactured integrated together on a transfer origin substrate, and hence compared with the case that the transferred bodies are formed on the transfer destination substrate directly, the amount of materials used in the manufacture of the transferred bodies can be reduced, the area efficiency can be greatly improved, and a transfer destination substrate on which a large number of devices or circuits are disposed in scattered locations can be manufactured efficiently and cheaply.

This is a Division of application Ser. No. 10/201,268 filed Jul. 24,2002. The entire disclosure of the prior application is herebyincorporated by reference herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a transfer method for devices orcircuits, and a circuit board, an electro-optical apparatus, an IC cardand an electronic appliance manufactured using the transfer method.

2. Description of the Related Art

Recently, with regard to the manufacture of electro-optical apparatusessuch as liquid crystal electro-optical apparatuses having thin filmdevices such as thin film transistors (TFTs) or thin film diodes (TFDs),there has been research into various art for reducing the amount of thinfilm device-constituting material discarded through etching and thusgreatly reducing the manufacturing cost of the electro-opticalapparatuses.

Conventionally, a method developed by Alien Technology called themicrostructure technique is known as art for disposing, on a separatesubstrate, LSI circuits that have been manufactured on a silicon wafer(Information Display, Vol. 15, No. 11 (November 1999)). Thismicrostructure technique is characterized in that the LSI circuits thathave been manufactured on the silicon wafer are separated to formmicrochips (i.e. microstructures), and then a solvent in which themicrostructures have been dispersed is made to flow over a substrate inwhich a pattern of holes for embedding has been formed in advance, thusdisposing the microstructures in specific positions on the substrate.According to this microstructure technique, a large number ofmicrostructures that have been formed in advance on a silicon wafer canbe disposed in scattered locations on a substrate.

However, with this microstructure technique, there is a drawback in thatdisposing the microstructures on the substrate with certainty andcarrying out accurate alignment are difficult. Furthermore, thedirections in which the microstructures are disposed are random, andhence it has been necessary to provide special circuits on themicrostructures, for example circuits having symmetry.

Moreover, in the case of the manufacture of color filters for liquidcrystal displays, a method in which a transfer technique is used isdisclosed in U.S. Pat. No. 6,057,067.

Furthermore, the present applicants have developed, as a method oftransferring, onto a transfer body, thin film devices such as TFTs thathave been formed on a substrate, a transfer method in which atransferred layer is formed on the substrate via a peeling layer, thisis all joined to the transfer body, and then the peeling layer isirradiated with light to bring about peeling, and the substrate isseparated away from the peeling layer, and have already filed a patentapplication (Japanese Patent Application Laid-open No. 10-125931).Similarly, the present applicants have developed a transfer method inwhich the whole of a transferred layer is joined to a primary transferbody, and then transfer is further carried out onto a secondary transferbody, and have already filed a patent application (Japanese PatentApplication Laid-open No. 11-26733).

According to these transfer techniques, functional devices that requirea high-temperature process during manufacture can be transferred ontodesired substrates, including ones that cannot withstand such hightemperatures.

However, with the conventional transfer techniques described above,there have been problems such as the following.

With the above transfer techniques, if an apparatus substrate is formedby transferring onto a transfer destination substrate the whole of athin film device layer that has been formed on a transfer originsubstrate, then, as with conventionally, a process in which the transferdestination substrate is divided into pieces of the required chip size(or small substrate size) by dicing or the like is still necessary.Moreover, in the process of assembling on the final substrate, it isnecessary to accurately arrange on the final substrate chips or the likethat have become scattered about. This is surprisingly troublesome, andhence there has been a problem that the manufacturing efficiency isprone to dropping.

Moreover, with the above transfer techniques, all of the thin filmdevices such as TFTs formed on the transfer origin substrate aretransferred onto the transfer destination substrate, and hence thelarger the area of the substrate, the better the properties, i.e. thehigher the output power, the uniformity and so on, required of the laserlight irradiated, and hence it becomes difficult to obtain a laser lightsource that meets the required performance, and moreover large,high-accuracy irradiation equipment becomes necessary for the laserlight irradiation. Furthermore, if laser light of high output power isirradiated, then there is a risk that the thin film devices may beheated to a temperature above the limit of heat resistance thereof,resulting in the functions of the thin film devices themselves beinglost, and hence there has been a problem that the transfer processitself becomes difficult.

Consequently, it is an object of the present invention to provide atransfer method according to which some only of a plurality of devicesor circuits can be transferred between substrates during thin filmapparatus manufacture, without it being necessary to carry out a step ofdividing (dicing) into chips or the like.

Moreover, it is an object of the present invention to provide a transfermethod according to which some of a plurality of devices or circuitsformed on a substrate can be transferred directly from the substrate toanother transferred body such as a circuit board.

SUMMARY OF THE INVENTION

In the present invention, a transfer method for transferring transferredbodies comprises: a step of forming a plurality of transferred bodies ona transfer origin substrate; and a step of applying energy to partialregions corresponding to the transferred bodies to be transferred, andtransferring the transferred bodies corresponding to the partial regionsonto a transfer destination substrate.

According to the transfer method of the present invention, a pluralityof transferred bodies such as devices or circuits that are to bedisposed on a transfer destination substrate with spaces therebetweencan be manufactured integrated together on a transfer origin substrate,and hence compared with the case that the transferred bodies are formedon the transfer destination substrate directly, the amount of materialsused in the manufacture of the transferred bodies can be reduced, thearea efficiency can be greatly improved, and a transfer destinationsubstrate on which a large number of devices or circuits are disposed inscattered locations can be manufactured efficiently and cheaply.

Moreover, according to the transfer method of the present invention, itbecomes easy to carry out selection and elimination before transfer on alarge number of devices or circuits that have been manufacturedconcentrated together on a transfer origin substrate, and hence theproduct yield can be improved.

Furthermore, according to the transfer method of the present invention,devices or circuits that are either the same as or different to oneanother can be built up on one another and combined, and hence bycombining devices that are manufactured under different processconditions to one another, it is possible to provide devices or circuitshaving a layered structure for which manufacture has been difficulthitherto, and moreover devices or circuits having a three-dimensionalstructure can be manufactured easily.

Here, in the present invention, ‘transferred bodies’ refers to TFTs,diodes, resistors, inductors, capacitors, and other single devices thatmay be either active or passive, circuits (chips) such as integratedcircuits in which devices are integrated and wired together so as toachieve a specific function, circuit parts comprising a combination of aplurality of devices, and whole apparatuses or apparatus parts that areconstituted by combining one or more circuits such as integratedcircuits so as to achieve a specific function. There are thus nolimitations on the constitution, shape or size of the ‘transferredbodies’.

Moreover, ‘transfer origin substrate’ refers to a substrate on which aplurality of transferred bodies are formed integrated together, and doesnot necessarily have to be flat. For example, the transfer originsubstrate may be such that the transferred bodies are formed on aspherical surface, or may be a substrate that does not have a fixedrigidity, for example a flexible film.

Furthermore ‘transfer destination substrate’ refers to a target on whichsome of the transferred bodies are to be disposed ultimately, and doesnot necessarily have to be flat. For example, the transfer destinationsubstrate may be such that the transferred bodies are formed on aspherical surface, or may be a substrate that does not have a fixedrigidity, for example a flexible film.

Furthermore, a ‘partial region’ may be a region corresponding to one ofthe transferred bodies, or may be a region corresponding to a pluralityof the transferred bodies.

Moreover, in the present invention, a transfer method for transferringtransferred bodies comprises: a step of forming a plurality oftransferred bodies on a transfer origin substrate; and a step ofapplying energy to partial regions corresponding to the transferredbodies to be transferred, and transferring the transferred bodiescorresponding to the partial regions onto transfer destinationsubstrates; wherein, in the step of transferring onto the transferdestination substrates, after transferring the transferred bodies ontoone of the transfer destination substrates, a step of applying energy toother partial regions corresponding to other transferred bodies on thetransfer origin substrate, and transferring the other transferred bodiescorresponding to the other partial regions onto another transferdestination substrates is repeated.

According to the present invention, transferred bodies that have beenmanufactured integrated together on a transfer origin substrate can betransferred partial region by partial region onto one transferdestination substrate after another, and hence on a production line itbecomes possible to dispose the same transferred bodies onto a largenumber of transfer destination substrates efficiently and continuously.The amount of work required per transfer destination substrate can thusbe reduced, and it becomes possible to greatly reduce the manufacturingcost due to manufacturing the transferred bodies integrated together onthe transfer origin substrate.

Furthermore, in the present invention, a transfer method fortransferring transferred bodies comprises: a step of forming a pluralityof transferred bodies on a transfer origin substrate; a step of makingthe transfer origin substrate face an intermediate transfer substrate,and transferring the transferred bodies onto the intermediate transfersubstrate; and a step of making the intermediate transfer substrate facea transfer destination substrate, and transferring the transferredbodies onto the transfer destination substrate; wherein, in at leasteither the step of transferring the transferred bodies onto theintermediate transfer substrate or the step of transferring thetransferred bodies onto the transfer destination substrate, energy isapplied to partial regions corresponding to the transferred bodies to betransferred, and the transferred bodies formed in the partial regionsare transferred.

According to the transfer method of the present invention, a pluralityof transferred bodies such as devices or circuits that are to bedisposed on a transfer destination substrate with spaces therebetweencan be manufactured integrated together on a transfer origin substrate,and hence compared with the case that the transferred bodies are formedon the transfer destination substrate directly, the amount of materialsused in the manufacture of the transferred bodies can be reduced, thearea efficiency can be greatly improved, and a transfer destinationsubstrate on which a large number of devices or circuits are disposed inscattered locations can be manufactured efficiently and cheaply.

Moreover, according to the transfer method of the present invention, itbecomes easy to carry out selection and elimination before transfer on alarge number of devices or circuits that have been manufacturedconcentrated together on a transfer origin substrate, and hence theproduct yield can be improved.

Furthermore, according to the transfer method of the present invention,devices or circuits that are either the same as or different to oneanother can be built up on one another and combined, and hence bycombining devices that are manufactured under different processconditions to one another, it is possible to provide devices or circuitshaving a layered structure for which manufacture has been difficulthitherto, and moreover devices or circuits having a three-dimensionalstructure can be manufactured easily.

In particular, according to the transfer method of the presentinvention, transferred bodies whose orientation has been reversedthrough being transferred onto an intermediate transfer substrate arefurther transferred onto a transfer destination substrate, and hencethere is an advantage that the orientation of the transferred bodies onthe transfer destination substrate can be made to be the same as theorientation of the transferred bodies on the transfer origin substrate.According to the transfer method of the present invention, transferredbodies such as devices or circuits that have been manufactured using anormal manufacturing method and have a normal constitution can thus beused on a transfer destination substrate with wiring carried out asnormal and other layers formed as normal.

Note that transfer onto an intermediate transfer substrate may becarried out not only once but also a plurality of times. Each time thenumber of times that transfer is carried out onto an intermediatetransfer substrate is increased by one, the orientation of thetransferred bodies on the transfer destination substrate is reversed,and hence the number of times that transfer is carried out onto anintermediate transfer substrate can be set so as to achieve the desiredorientation.

Moreover, in the present invention, a transfer method for transferringtransferred bodies comprises: a step of forming a plurality oftransferred bodies on a transfer origin substrate; a step oftransferring the transferred bodies from the transfer origin substrateonto an intermediate transfer substrate; and a step of transferring thetransferred bodies from the intermediate transfer substrate ontotransfer destination substrates; wherein, in at least either the step oftransferring the transferred bodies onto the intermediate transfersubstrate or the step of transferring the transferred bodies onto thetransfer destination substrates, energy is applied to partial regionscorresponding to the transferred bodies to be transferred, and thetransferred bodies formed in the partial regions are transferred; andwherein, in the step of transferring onto the transfer destinationsubstrates, after transferring the transferred bodies onto one of thetransfer destination substrates, a step of applying energy to otherpartial regions corresponding to other transferred bodies on thetransfer origin substrate, and transferring the other transferred bodiescorresponding to the other partial regions onto another one of thetransfer destination substrates is repeated.

According to the present invention, transferred bodies that have beenmanufactured integrated together on a transfer origin substrate andtransferred onto an intermediate transfer substrate can be transferredpartial region by partial region onto one transfer destination substrateafter another, and hence on a production line it becomes possible todispose similar transferred bodies onto a large number of transferdestination substrates efficiently and continuously. The amount of workrequired per transfer destination substrate can thus be reduced, and itbecomes possible to greatly reduce the manufacturing cost due tomanufacturing the transferred bodies integrated together on the transferorigin substrate.

In the transfer methods of the present invention, the transferred bodiesare constituted so as to be dividable into a plurality of regions, andin the step(s) of transferring, the energy is applied to one or more ofthe plurality of regions. Because the transferred bodies are constitutedso as to be dividable, it becomes that, by applying the energy to anyone or more of the regions, it is easy to carry out transfer on only theregion(s) to which the energy has been applied.

Here ‘dividable’ includes cases such as the transferred bodies beingseparated at the boundaries therebetween by grooves, or beingpartitioned by other members through an undulating structure, and alsocases such as the transferred bodies being formed with margins lefttherebetween so that there will be no adverse effects on the functioningof the transferred bodies even when breakage occurs in the vicinity ofthe boundaries.

In the transfer methods of the present invention, the step oftransferring the transferred bodies onto the intermediate transfersubstrate or the transfer destination substrate comprises a step ofmaking the transfer origin substrate face the intermediate transfersubstrate or making the intermediate transfer substrate face thetransfer destination substrate, and forming an adhesive layer on atleast one of the transferred bodies and the intermediate transfersubstrate or the transfer destination substrate. The transferred bodiesto be transferred are connected to the intermediate transfer substrateor the transfer destination substrate by forming the adhesive layer, andhence by releasing the connection between the transfer origin substrateor the intermediate transfer substrate and the transferred bodies to betransferred by applying the energy, the transferred bodies for which theconnection has been released can be transferred onto the intermediatetransfer substrate or the transfer destination substrate.

Here, regarding the ‘adhesive layer’, any of various publicly knownadhesives can be used, and it is also possible to use a photo-curingresin, a photo-plasticizing resin, a thermosetting resin or athermoplastic resin in accordance with the manufacturing conditions.

The transfer methods of the present invention further comprise: beforethe step of forming the transferred bodies, a step of forming a peelinglayer on the transfer origin substrate; and, after the step of formingthe transferred bodies, a step of dividing at least one of thetransferred bodies and the peeling layer into a plurality of regions.Because the transferred bodies are formed via a peeling layer, bybringing about peeling through the energy at partial regions of thepeeling layer, the transferred bodies formed in these partial regionscan easily be peeled off, and hence can be transferred onto the transferdestination substrate or the intermediate transfer substrate.

Here the ‘peeling layer’ should be formed from a material for which thebonding strength to the substrate or the transferred bodies weakens uponthe application of the energy; for example, amorphous silicon,hydrogen-containing amorphous silicon, nitrogen-containing amorphoussilicon, hydrogen-containing alloys, nitrogen-containing alloys,multi-layer films, ceramics, metals, organic macromolecular materials,and so on can be used.

In the transfer methods of the present invention, light is irradiated asthe energy. By using light, application of energy to any chosen regionscan be carried out, and moreover accurate alignment is possible, andhence using light is advantageous in particular in the case that thetransferred bodies are minute.

Here, there are no limitations on the ‘light’, but if, for example,laser light is used, then because laser light is coherent, the energycan be applied efficiently, and moreover in precise positions.

In the transfer methods of the present invention, in one or more of thesteps, there are: a step of shifting the relative position betweennozzles that discharge a material and the substrate; and a step ofdischarging the material from the nozzles. Because the material isapplied by discharging from nozzles, a desired layer can be formedprecisely in desired positions and without wasting the material. Notethat for such discharging of a material, the so-called ink jet coatingmethod or a method in which the material is discharged by formingbubbles through heat can be used.

In the transfer methods of the present invention, in the step of formingthe transferred bodies, region dividing means is formed that guidesduring the transfer such that the transferred bodies are divided alongouter peripheries of the partial regions. By forming the region dividingmeans, it becomes possible to cleanly separate a transferred body awayfrom the other transferred bodies along the shape of the region of thistransferred body, and hence it becomes possible to prevent thetransferred bodies from being damaged during the separation.

In the transfer methods of the present invention, in the step of formingthe transferred bodies, a projecting structure that demarcates theregions of the transferred bodies is formed as the region dividingmeans. Because a projecting structure that makes division of thetransferred bodies easy is formed in advance, it becomes possible tocarry out the peeling off of each of the transferred bodies easily andreliably.

In the transfer methods of the present invention, in the step of formingthe transferred bodies, grooves formed at boundaries between the regionsof the transferred bodies are formed as the region dividing means.Because grooves that make division of the transferred bodies easy areformed in advance, the film thickness in the vicinity of the boundariesbetween the regions of the transferred bodies can be made thin. It thusbecomes possible to carry out the peeling off of each of the transferredbodies easily and reliably.

In the transfer methods of the present invention, in the step of formingthe transferred bodies, devices or circuits having the same constitutionas one another are formed as the transferred bodies. By adopting such aconstitution, it becomes possible to transfer transferred bodies ontotransfer destination substrates one after another without distinguishingbetween the transferred bodies, and hence the manufacturing efficiencycan be improved.

In the transfer methods of the present invention, in the step of formingthe transferred bodies, devices or circuits having a differentconstitution to one another are formed as the transferred bodies. Thisis because, depending on the number of devices or circuits required,devices or circuits that are different to one another may be formed on asingle transfer origin substrate, and depending on the number produced,it may be most efficient to form a plurality of transferred bodies thatare different to one another on a single transfer origin substrate.

The present invention also provides a circuit board manufactured using atransfer method of the present invention. It may be the case that thecircuit board functions independently when alone, or it may be the casethat independent functioning is attained when the circuit board iscombined with other circuit boards.

According to the circuit board of the present invention, a circuit boardcan be manufactured at low cost through use of the transfer method ofthe present invention, and hence electronic circuitry can be providedmore cheaply than conventionally. An example of the circuit board is anactive matrix board. According to this active matrix board, a largenumber of devices or circuits that are to be disposed on a transferdestination substrate in scattered locations with spaces therebetweencan be manufactured concentrated together on a transfer originsubstrate, and these devices or circuits can be transferred preciselyinto prescribed positions on the transfer destination substrate;compared with a conventional active matrix board that is manufactured byforming the devices directly on the substrate, the area efficiency inthe manufacture of the devices such as TFTs can be greatly improved, anda large active matrix board in particular can be provided cheaply.

Moreover, because manufacture is carried out by manufacturing a largenumber of devices or circuits concentrated together on a transfer originsubstrate and then transferring the devices or circuits onto a transferdestination substrate, it is possible to ultimately mount on a transferdestination substrate devices or circuits that have already beenmanufactured, without damaging the devices or circuits through amanufacturing process involving heat or the like; the performance of thecircuit board can thus be improved. Furthermore, it becomes easy tocarry out selection and elimination before the transfer of the devicesor circuits, and hence the product yield can be improved.

Moreover, due to accurately disposing the minute devices or circuits inprescribed positions on the final transfer destination substrate, theability to follow curvature of the substrate is improved, and by using aflexible transfer destination substrate, an active matrix type displayapparatus that is flexible, light, and strong against impact whendropped can be provided. Furthermore, a circuit board having a curvedsurface such as that of a curved display can be provided.

It is preferable, for example, to form memory circuitry on the circuitboard. Specifically, memory parts are formed on the final transferdestination substrate, and then devices or circuits are transferred ontothe rear surfaces of the memory parts using a transfer method accordingto the present invention, thus constituting a memory. An example of thememory is a FeRAM. A FeRAM has ferroelectric films of PZT, SBT or thelike which require a high temperature for deposition, and hence hithertoit has been difficult to manufacture an embedded structure in which thememory devices are disposed on top of the circuitry for memoryreading/writing; however, by using the present invention, it is possibleto manufacture the FeRAM on the transfer destination substrate, and thendispose the devices or circuits for reading/writing on the rear surfacethereof. According to the present invention, a memory having an embeddedstructure for which manufacture has been difficult hitherto can bemanufactured easily.

A circuit board according to the present invention is a circuit board inwhich a plurality of transferred bodies that have been transferred ontoa transfer destination substrate using a transfer method according tothe present invention are electrically connected to one another.According to the circuit board of the present invention, the circuitboard can be manufactured at low cost through use of the transfer methodof the present invention, and hence electronic circuitry can be providedmore cheaply than conventionally, i.e. there are advantages similar tothose of the active matrix board described above.

In particular, by carrying out the electrical connection through a stepin which a coating liquid comprising fine metallic particles dispersedin a solvent is applied using an ink jet coating method, conductors canbe drawn on efficiently in desired positions, even if there is somewhatof a level difference.

Another circuit board according to the present invention is a circuitboard in which a plurality of transferred bodies are transferred instaggered fashion onto a transfer destination substrate using a transfermethod according to the present invention, and then the transferredbodies are electrically connected to one another. According to thecircuit board of the present invention, there are advantages similar tothose of the active matrix board described above. The transferred bodiesmay have the same structure as one another, or may have differentfunctions to one another.

Another circuit board according to the present invention is a circuitboard in which at least one second transferred body is transferred ontoand thus disposed on top of a first transferred body that has beentransferred onto a transfer destination substrate using a transfermethod according to the present invention, the second transferred bodyhaving a smaller area than the first transferred body, and then thefirst and second transferred bodies are electrically connected to oneanother. According to the circuit board of the present invention, thereare advantages similar to those of the active matrix board describedabove. The transferred bodies may have the same structure as oneanother, or may have different functions to one another.

By placing transferred bodies such as devices or circuits on top of oneanother and electrically connecting the transferred bodies together inthis way, transferred bodies that are the same as or different to oneanother can be built up on one another and combined, and hence devicesor circuits that are manufactured under different process conditions toone another can be combined. It is thus possible to provide deviceshaving a layered structure for which manufacture has been difficulthitherto, and moreover devices having a three-dimensional structure canbe manufactured easily.

The present invention also provides an electro-optical apparatusmanufactured using a transfer method according to the present invention.Here, ‘electro-optical apparatus’ refers to any apparatus havingelectro-optical devices that generate light or change the state of lightfrom the outside through an electrical operation, and includes bothapparatuses that generate light themselves and apparatuses that controlthe passage of light from the outside. The term refers, for example, toactive matrix type displays and so on having, as electro-opticaldevices, electrophoretic devices, EL (electroluminescence) devices, orelectron emitting devices that generate light by firing at alight-generating plate electrons that have been generated by applying anelectric field.

For example, in the case of an electro-optical apparatus using ELdevices, the EL devices can be mounted on by transfer, and hence thereis no thermal damage to the luminescent layers or antireflection layersduring manufacture of the EL devices; moreover, unlike in the case thatthe devices are formed between the substrate and the luminescent layersas conventionally, the devices do not obstruct the display, and hencethe display performance is improved.

The present invention also provides an electronic appliance manufacturedusing a transfer method according to the present invention. According tothe electronic appliance of the present invention, a large number ofdevices or circuits that are to be disposed on a transfer destinationsubstrate in scattered locations with spaces therebetween and used inthe electronic appliance can be manufactured concentrated together on atransfer origin substrate, and these devices or circuits can betransferred precisely into prescribed positions on the transferdestination substrate; compared with a conventional electronic appliancethat is manufactured by forming the devices directly on the substrate,the area efficiency in the manufacture of the devices such as TFTs canthus be greatly improved.

Moreover, because manufacture is carried out by manufacturing a largenumber of devices or circuits concentrated together on a transfer originsubstrate and then transferring the devices or circuits onto a transferdestination substrate, it is possible to ultimately mount on a transferdestination substrate devices or circuits that have already beenmanufactured, without damaging the devices or circuits through amanufacturing process involving heat or the like; the performance of theelectronic appliance can thus be improved.

Furthermore, it becomes easy to carry out selection and eliminationbefore the transfer of the devices or circuits, and hence the productyield can be improved.

Moreover, due to accurately disposing the minute devices or circuits inprescribed positions on the final transfer destination substrate, theability to follow curvature of the substrate is improved, and by using aflexible transfer destination substrate, an electronic appliance that isflexible, light, and strong against impact when dropped can be provided.Furthermore, an electronic appliance having a curved surface such as acurved display can be provided, and hence a shape that was impossible ordifficult to attain with conventional articles can be attained, and thusthe amount of freedom in product design is broadened.

Here, ‘electronic appliance’ refers to any appliance that attains aspecific function through a combination of a plurality of devices orcircuits; for example, the electronic appliance may comprise anelectro-optical apparatus or a memory. There are no particularlimitations on the constitution of the electronic appliance, butexamples include a mobile telephone, a video camera, a personalcomputer, a head-mounted display, and a rear type or front typeprojector, and also a fax machine having a display function, a digitalcamera viewfinder, a portable TV, a DSP apparatus, a PDA, an electronicorganizer, an electric signboard, and a display foradvertisements/announcements.

The present invention also provides an IC card manufactured using atransfer method according to the present invention. According to the ICcard of the present invention, a circuit board provided with devices orcircuits that are IC card components is formed using a transfer methodof the present invention, and hence the IC card has advantages similarto those of the electronic appliance of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are perspective process drawings for explaining anexample of partial transfer in which some of the transferred bodiesformed on a transfer origin substrate are transferred onto a transferdestination substrate, according to a first invention;

FIGS. 2A to 2E are perspective process drawings for explaining anexample of partial transfer in which all of the transferred bodiesformed on a transfer origin substrate are first transferred onto anintermediate transfer substrate, and then some of the transferred bodiesare transferred onto a transfer destination substrate, according to asecond invention;

FIG. 3 is a process flowchart for explaining an example of partialtransfer in which some of a plurality of transferred bodies aretransferred onto a transfer destination substrate, and then a step isrepeated in which others of the transferred bodies are transferred ontoother transfer destination substrates, according to a third invention;

FIG. 4 are drawings for explaining a first embodiment of the presentinvention; FIG. 4A is a sectional view showing a first step of forming apeeling layer on a first substrate, and FIG. 4B is a sectional viewshowing a second step of forming transferred bodies on the peelinglayer;

FIG. 5A is a sectional view for explaining a transferred body separationmethod in which the transferred layer and the peeling layer arecompletely etched, FIG. 5B is a sectional view for explaining atransferred body separation method in which over-etching is carried out,and FIG. 5C is a sectional view for explaining a separation method inwhich only the transferred layer is etched and separation of the peelinglayer is not carried out;

FIG. 6 is a perspective view for explaining a separation method in whichgrooves are formed at boundaries between the transferred bodies and thepeeling layer is partially cut;

FIG. 7A is a sectional view of an example in which a TFT device isformed as a transferred body, FIG. 7B is a sectional view (the sectionalong 7B-7B in FIG. 7C) of an example in which an integrated circuit isformed as a transferred body, and FIG. 7C is a top view of theintegrated circuit example;

FIG. 8 consists of manufacturing process sectional views of the secondstep for the example in which a TFT is formed as a transferred body;

FIG. 9A is a sectional view of a third step in which a first substrate(transfer origin substrate) and a final substrate (transfer destinationsubstrate) are joined together, FIG. 9B is a sectional view of a fourthstep in which partial irradiation with light is carried out from thefirst substrate (transfer origin substrate) side, thus bringing aboutpeeling in desired regions, and FIG. 9C is a sectional view of a fifthstep in which the first substrate (transfer origin substrate) and thefinal substrate (transfer destination substrate) are pulled apart afterthe peeling;

FIG. 10 is a perspective view illustrating a thin film formation (liquidjetting) apparatus for implementing an ink jet coating method used inlayer formation in the present invention;

FIG. 11A is a perspective view of main parts for explaining the roughconstitution of a head in the thin film formation (liquid jetting)apparatus, and FIG. 11B is a sectional view of the main parts from theside;

FIG. 12A is a perspective view showing a state in which banks have beenformed on the transferred bodies for preventing a material from flowingout, and FIG. 12B is an enlarged sectional view of main parts in thiscase;

FIG. 13 are drawings for explaining a second embodiment of the presentinvention; FIG. 13A is a sectional view showing a state in which a firstsubstrate (transfer origin substrate) and a final substrate (transferdestination substrate) have been placed on top of one another with aUV-curing resin therebetween, FIG. 13B is a sectional view forexplaining a step in which partial irradiation with UV light is carriedout, FIG. 13C is a sectional view showing a fourth step in which partialirradiation with light is carried out from the first substrate side,thus bringing about peeling in desired regions, and FIG. 13D is asectional view showing a fifth step in which the first substrate and thefinal substrate are pulled apart after the peeling;

FIG. 14 are drawings for explaining a third embodiment of the presentinvention; FIG. 14A is a sectional view showing a step in which firstlaser light irradiation is carried out from a first substrate (transferorigin substrate) side, thus joining desired transferred bodies to afinal substrate (transfer destination substrate), and FIG. 14B is asectional view showing a step in which second laser light irradiation iscarried out from the first substrate side, thus bringing about peelingin a peeling layer;

FIG. 15 is a drawing for explaining an example in which adhesive sheetsare supplied continuously;

FIGS. 16A to 16E are manufacturing process sectional views forexplaining a transfer method in which transfer is carried out withoutseparating the transferred bodies in advance, according to a fourthembodiment of the present invention;

FIGS. 17A to 17E are manufacturing process sectional views forexplaining a transfer method in which transferred bodies are transferredwith only the peeling layer having been separated, according to a fifthembodiment of the present invention;

FIG. 18A is a sectional view for explaining an example in which aprojecting structure is formed on a first substrate (transfer originsubstrate), and a peeling layer is separated into unit transfer regions,and FIG. 18B is a sectional view for explaining an example in which aprojecting structure is formed on a first substrate, and a peeling layerand transferred bodies are separated into unit transfer regions;

FIG. 19 are drawings for explaining a sixth embodiment of the presentinvention; FIG. 19A is a sectional view showing a state in which amulti-layer film has been formed on a second substrate (intermediatetransfer substrate), FIG. 19B is a sectional view showing a third stepin which a first substrate (transfer origin substrate) and the secondsubstrate are joined together, and a fourth step in which partialirradiation with light is carried out from the first substrate side,thus bringing about peeling in a peeling layer, FIG. 19C is a sectionalview showing a fifth step in which a transferred-body-supplyingsubstrate (intermediate transfer substrate) is manufactured, FIG. 19D isa sectional view showing a sixth step in which a final substrate(transfer destination substrate) is placed on top of thetransferred-body-supplying substrate, and irradiation with light iscarried out selectively, thus transferring onto the final substrate onlydevices to be transferred, and FIG. 19E is a sectional view showing aseventh step in which, after the transfer has been completed, the finalsubstrate is removed from the second substrate;

FIG. 20 are drawings for explaining a seventh embodiment of the transfermethod according to the present invention; FIG. 20A is a sectional viewshowing a step (d) in which light is irradiated onto a peeling layer ona first substrate to transfer transferred bodies onto a second substrate(intermediate transfer substrate) side, FIG. 20B is a sectional viewshowing a state in which the first substrate has been removed from thetransferred bodies that have been transferred onto the second substrateside, FIG. 20C is a sectional view showing a step (e) in which a thirdsubstrate (transfer destination substrate) on which a multi-layer filmhas been formed in advance is joined onto the transferred bodies thathave been transferred onto the second substrate side, and FIG. 20D is asectional view showing a step (f) in which a transferred-body-supplyingsubstrate is formed;

FIG. 21 is a schematic perspective view for explaining a first exampleof a circuit board according to the present invention;

FIG. 22 is a schematic perspective view for explaining a second exampleof a circuit board according to the present invention;

FIG. 23 is a schematic perspective view for explaining a third exampleof a circuit board according to the present invention;

FIG. 24 is a schematic perspective view for explaining a fourth exampleof a circuit board according to the present invention;

FIG. 25 is a schematic perspective view for explaining a fifth exampleof a circuit board according to the present invention;

FIG. 26 is a schematic perspective view of a liquid crystalelectro-optical apparatus for explaining an electro-optical apparatusand an active matrix board, which is an example of the circuit boardaccording to the present invention;

FIG. 27 is a top view showing a first example of the active matrixboard;

FIG. 28 is a top view showing a second example of the active matrixboard;

FIG. 29 is a top view showing a third example of the active matrixboard;

FIG. 30 is a drawing for explaining the structure of an organicelectroluminescence apparatus, which is an example of theelectro-optical apparatus according to the present invention; it is asectional view showing a state in which devices are being transferredonto the rear surfaces of EL pixels that have been formed on a finalsubstrate;

FIG. 31 is a sectional view showing a state in which wiring between theEL pixels and the devices transferred onto the rear surfaces of the ELpixels has been formed;

FIG. 32 is an enlarged top view showing monocrystalline silicon blocksthat can be used for manufacturing devices used in the presentinvention;

FIG. 33 are examples of electronic appliances according to the presentinvention; FIG. 33A shows an example of application to a mobiletelephone, FIG. 33B shows an example of application to a video camera,FIG. 33C shows an example of application to a portable personalcomputer, FIG. 33D shows an example of application to a head-mounteddisplay, FIG. 33E shows an example of application to a rear typeprojector, and FIG. 33F shows an example of application to a front typeprojector; and

FIG. 34 is a schematic perspective view for explaining the structure ofan IC card according to the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Following is a description of embodiments of the present invention withreference to the drawings.

(Forms of the Present Invention)

Firstly, before the description of embodiments of the present invention,a description will be given of forms of the present invention withreference to FIGS. 1 to 3. Detailed embodiments for each form will begiven afterwards.

Following is a description of a first invention which relates tocarrying out partial transfer once, with reference to FIG. 1 which areprocess drawings for explaining the concept of this first invention.

As shown in FIG. 1, the transfer method of the first invention comprisesa step of forming a plurality of transferred bodies 2 a on a transferorigin substrate 1 (FIG. 1A), and a step of applying energy to partialregions corresponding to a transferred body 2 a to be transferred (shownby the diagonal shading), and transferring the transferred body 2 acorresponding to these partial regions onto a transfer destinationsubstrate 3 (FIG. 1B).

Firstly, as shown in FIG. 1A, the transferred bodies 2 a are formed. Thetransferred bodies 2 a are formed on a light-transmitting heat-resistanttransfer origin substrate 1 via a peeling layer in which peeling occursif energy is applied. The transferred bodies 2 a are TFTs, diodes,resistors, inductors, capacitors, or other active or passive devices, orcircuits comprising a combination of such devices, and the layer inwhich the plurality of transferred bodies 2 a are formed is referred toas the transferred layer 2. Regarding the transferred bodies 2 a, aplurality of devices or circuits having the same function as one anothermay be formed, or a plurality of devices or circuits having differentfunctions to one another may be formed, or a plurality of each of aplurality of different types of device or circuit may be formed.

Next, as shown in FIG. 1B, the transfer destination substrate 3 isjoined to the desired transferred body 2 a, and then energy is applied,thus peeling off the transferred body 2 a. For example, when a peelinglayer is used, if a specific energy is applied through irradiation oflaser light (irradiation of light), heating or the like, then thebonding strength between atoms or molecules in the peeling layer drops,or a gas is generated and thus the bonding strength drops, and hencepeeling occurs.

The joining of the transferred body 2 a onto the transfer destinationsubstrate 3 can be achieved, for example, by forming an adhesive layeron the desired transferred body 2 a in advance. By applying energy tothe region of the peeling layer where the transferred body 2 a isformed, transfer occurs in which only the transferred body 2 a to whichthe energy has been applied is joined onto the transfer destinationsubstrate 3, as shown in FIG. 1C.

According to the transfer method of the first invention, a plurality oftransferred bodies such as devices or circuits that are to be disposedon a transfer destination substrate with spaces therebetween can bemanufactured integrated together on a transfer origin substrate, andhence compared with the case that the transferred bodies are formed onthe transfer destination substrate directly, the amount of materialsused in the manufacture of the transferred bodies can be reduced, thearea efficiency can be greatly improved, and a transfer destinationsubstrate on which a large number of devices or circuits are disposed inscattered locations can be manufactured efficiently and cheaply.

Moreover, according to the transfer method of the first invention, itbecomes easy to carry out selection and elimination before transfer on alarge number of devices or circuits that have been manufacturedconcentrated together on a transfer origin substrate, and hence theproduct yield can be improved.

Furthermore, according to the transfer method of the first invention,devices or circuits that are either the same as or different to oneanother can be built up on one another and combined, and hence bycombining devices that are manufactured under different processconditions to one another, it is possible to provide devices or circuitshaving a layered structure for which manufacture has been difficulthitherto, and moreover devices or circuits having a three-dimensionalstructure can be manufactured easily.

In FIG. 2, process drawings are shown for explaining the concept of asecond invention which relates to carrying out transfer a plurality oftimes. As shown in FIG. 2, the transfer method of the second inventioncomprises a step of forming a plurality of transferred bodies 2 a on atransfer origin substrate 1 (FIG. 2A), a step of transferring thetransferred bodies 2 a onto an intermediate transfer substrate 5 (FIGS.2B and 2C), and a step of transferring the transferred body 2 a onto atransfer destination substrate 6 (FIG. 2D).

FIG. 2C shows the intermediate transfer substrate 5 onto which thetransferred bodies 2 a have been transferred. As shown in FIG. 2C, it ispossible to transfer all of the transferred bodies 2 a (i.e. the wholeof the transferred layer 2) formed on the transfer origin substrate 1onto the intermediate transfer substrate 5, and then apply energyselectively to the intermediate transfer substrate 5 onto which all ofthe transferred bodies 2 a have been transferred, thus transferring onlyone or more desired transferred bodies 2 a onto the transfer destinationsubstrate 6. Alternatively, it is also possible to apply energyselectively to transfer desired transferred bodies 2 a onto theintermediate transfer substrate 5, and then transfer onto the transferdestination substrate 6 all of the transferred bodies 2 a that have beenselectively transferred onto the intermediate transfer substrate 5.Furthermore, it is also possible to apply energy selectively to transferone or more desired transferred bodies 2 a onto the intermediatetransfer substrate 5, and then apply energy selectively to thetransferred bodies 2 a that have been selectively transferred onto theintermediate transfer substrate 5, thus transferring only one or morespecific transferred bodies 2 a onto the transfer destination substrate6.

According to the transfer method of the second invention, there are thesame advantages as with the transfer method of the first invention;moreover, in the case in particular of transferring an even number oftimes, transferred bodies whose orientation has been reversed throughbeing transferred onto the intermediate transfer substrate are furthertransferred onto the transfer destination substrate, and hence there isan advantage that the orientation of the transferred bodies on thetransfer destination substrate can be made to be the same as theorientation of the transferred bodies on the transfer origin substrate.According to the transfer method of the present invention, transferredbodies such as devices or circuits that have been manufactured using anormal manufacturing method and have a normal constitution can thus beused on the transfer destination substrate with wiring carried out asnormal and other layers formed as normal.

FIG. 3 shows a flowchart for explaining the concept of a third inventionin which partial transfer is carried out repeatedly onto differenttransfer destination substrates.

The third invention can be combined with either the first invention orthe second invention; as shown in FIG. 3, the third invention comprisesa step of forming a plurality of transferred bodies on a transfer originsubstrate (S1), a step of applying energy to partial regionscorresponding to transferred bodies to be transferred (S2˜S4), and astep of transferring the transferred bodies corresponding to the partialregions onto a transfer destination substrate (S5). Moreover, after thetransferred bodies have been transferred onto one transfer destinationsubstrate, a step is repeated in which energy is applied to otherpartial regions corresponding to others of the transferred bodies on thetransfer origin substrate, and the transferred bodies corresponding tothe other partial regions are transferred onto another transferdestination substrate (S6→S2˜S5).

More specifically, the case in which the third invention is combinedwith the first invention, which relates to carrying out partial transferonce, will now be described (see FIG. 1). Firstly, a transferred layer 2comprising a plurality of transferred bodies 2 a is formed on a transferorigin substrate 1 (S1). Next, an adhesive layer is applied to a desiredtransferred body 2 a (S2), and then the transfer origin substrate 1 ismade to face a transfer destination substrate 3 and alignment is carriedout, before adhesion is carried out (S3). Partial irradiation with lightis then carried out onto the region corresponding to the desiredtransferred body 2 a (S4), thus bringing about peeling in a peelinglayer or the like. The transfer destination substrate 3 is then peeledoff along with the transferred body 2 a that has been joined thereto.The peeled off transfer destination substrate 3 is outputted. Here, inthe case that other transferred bodies 2 a to be transferred stillremain on the transfer origin substrate 1 (S6: Y), once again anadhesive layer is applied to the required transferred body 2 a (S2),another transfer destination substrate 3 is fed in, alignment is carriedout (S3), partial irradiation with light is carried out (S4), thetransferred body 2 a that has been joined to the transfer destinationsubstrate 3 is peeled off from the transfer origin substrate 1, and thetransfer destination substrate 3 having the transferred bodies 2 ajoined thereto is outputted (S5). Subsequently, the feeding in of a newtransfer destination substrate, the alignment, the irradiation withlight, and the peeling are repeated (S2˜S6).

Next, a description will be given of the case in which the thirdinvention is combined with the second invention, which relates tocarrying out transfer a plurality of times (see FIG. 2). Firstly, atransferred layer 2 comprising a plurality of transferred bodies 2 a isformed on a transfer origin substrate 1 (S1). The whole of thetransferred layer 2 is then transferred onto an intermediate transfersubstrate 5. Next, an adhesive layer is applied to a desired transferredbody 2 a (S2), and then the intermediate transfer substrate 5 is made toface a transfer destination substrate 6 and alignment is carried out,before adhesion is carried out (S3). Partial irradiation with light isthen carried out onto the region corresponding to the desiredtransferred body 2 a (S4), thus bringing about peeling in a peelinglayer or the like. The transfer destination substrate 6 is then peeledoff along with the transferred body 2 a that has been joined thereto.The peeled off transfer destination substrate 6 is outputted. Here, inthe case that other transferred body 2 a to be transferred still remainon the intermediate transfer substrate 5 (S6: Y), once again an adhesivelayer is applied to the required transferred body 2 a (S2), anothertransfer destination substrate 6 is fed in, alignment is carried out(S3), partial irradiation with light is carried out (S4), thetransferred body 2 a that has been joined to the transfer destinationsubstrate 6 is peeled off from the intermediate transfer substrate 5,and the transfer destination substrate 6 having the transferred body 2 ajoined thereto is outputted (S5). Subsequently, the feeding in of a newtransfer destination substrate, the alignment, the irradiation withlight, and the peeling are repeated (S2˜S6).

According to the transfer method of the third invention, transferredbodies that have been manufactured integrated together on a transferorigin substrate can be transferred partial region by partial regiononto one transfer destination substrate after another, and hence on aproduction line it becomes possible to dispose similar transferredbodies onto a large number of transfer destination substratesefficiently and continuously. The amount of work required per transferdestination substrate can thus be reduced, and it becomes possible togreatly reduce the manufacturing cost due to manufacturing thetransferred bodies integrated together on the transfer origin substrate.

In the following embodiments, detailed embodiments of the above first tothird inventions are described.

First Embodiment

FIGS. 4A to 12B are drawings for explaining a first embodiment (transfermethod) of the present invention. The first embodiment comes under thefirst invention, which relates to carrying out partial transfer once.The device transfer method is carried out through the following first tofifth steps.

<First Step>

In the first step, as shown in FIG. 4A, a peeling layer (light-absorbinglayer) 11 is formed on a first substrate (transfer origin substrate) 10.

The first substrate 10 is preferably a light-transmitting substratethrough which light can pass. As a result, light can be irradiated ontothe peeling layer via the first substrate, and hence peeling can be madeto occur swiftly and accurately through the irradiation of light ontothe peeling layer. In this case, it is preferable for the transmissivityto light of the first substrate to be at least 10%, more preferably atleast 50%. The higher the transmissivity, the lower the attenuation(loss) of light becomes, and hence the lower the amount of lightrequired to bring about peeling in the peeling layer 11.

Moreover, it is preferable for the first substrate 10 to be constitutedfrom a highly reliable material, in particular a material havingexcellent heat resistance. The reason for this is that when, forexample, a transferred layer 12 or an intermediate layer 16 is formed aswill be described later, depending on the type thereof and the formationmethod, the process temperature may be high (e.g. about 350 to 1000°C.), but even in this case, if the first substrate 10 has excellent heatresistance, then there will be a broad range of possible settings forthe film formation conditions such as the temperature conditions duringthe formation of the transferred layer 12 or the like on the firstsubstrate 10. When manufacturing a large number of devices or circuitson the first substrate, the desired high-temperature processing thusbecomes possible, and hence devices or circuits of high reliability andhigh performance can be manufactured.

If the maximum temperature during formation of the transferred layer 12is Tmax, it is thus preferable for the first substrate 10 to beconstituted from a material having a strain point of at least Tmax.Specifically, it is preferable for the constituent material of the firstsubstrate 10 to have a strain point of at least 350° C., more preferablyat least 500° C. Examples of such a material include quartz glass, andheat-resistant glasses such as Corning 7059 and Nippon Electric GlassOA-2.

Moreover, there are no particular limitations on the thickness of thefirst substrate 10, but generally about 0.1 to 5.0 mm is preferable,with about 0.5 to 1.5 mm being more preferable. This is because thethicker the first substrate 10, the higher the strength, and yet thethinner the first substrate 10, the less attenuation of light occurs inthe case that the transmissivity of the first substrate 10 is low. Notethat in the case that the transmissivity to light of the first substrate10 is high, the thickness may exceed the upper limit given above.

Moreover, so that the light can be irradiated uniformly, it ispreferable for the thickness of the first substrate 10 to be uniform.

As described above, there are various conditions on the first substrate,i.e. the transfer origin substrate; nevertheless, unlike the transferdestination substrate, which is the final product, the transfer originsubstrate can be used repeatedly, and hence even if a relativelyexpensive material is used, increase in the manufacturing cost can bekept down through such repeated use.

The peeling layer 11 has the property of absorbing irradiated light,whereby peeling occurs within the layer and/or at the interface thereof(referred to as ‘in-layer peeling’ and ‘interfacial peeling’respectively); preferably, the peeling layer 11 is such that the bondingstrength between atoms or molecules of the material that constitutes thepeeling layer 11 is lost or reduced upon irradiation with light, i.e.ablation occurs, leading to in-layer peeling and/or interfacial peeling.

Furthermore, it may be the case that a gas is discharged from thepeeling layer 11 upon irradiation with light, whereupon a separationeffect is realized. That is, it may be the case that a component thatwas contained in the peeling layer 11 turns into a gas and isdischarged, or the case that the peeling layer 11 absorbs light andturns into a gas instantaneously, and this vapor is discharged,contributing to separation. Examples of the constitution of the peelinglayer 11 include the following A to E.

A. Amorphous Silicon (a-Si)

Hydrogen (H) may be contained in the amorphous silicon. In this case,the H content is preferably at least about 2 at %, more preferably about2 to 20 at %. If a prescribed amount of hydrogen (H) is contained inthis way, then the hydrogen is discharged upon irradiation with light,and hence an internal pressure is generated within the peeling layer 11,and this acts as a force for making the upper and lower thin films peelaway from one another. The hydrogen (H) content in the amorphous siliconcan be adjusted by suitably setting the film formation conditions, forexample conditions such as the gas composition in CVD, the gas pressure,the gas atmosphere, the gas flow rate, the temperature, the substratetemperature, and the power input. Amorphous silicon has good lightabsorption, and moreover film formation is easy, and hencepracticability is high. By constituting the peeling layer from amorphoussilicon, it is thus possible to cheaply form a peeling layer for whichpeeling occurs accurately upon irradiation with light.

B. Various oxide ceramics, dielectrics (ferroelectrics) andsemiconductors such as silicon oxides and silicates, titanium oxides andtitanates, zirconium oxides and zirconates, and lanthanum oxides andlanthanates

Examples of silicon oxides are SiO, SiO₂ and Si₃O₂, and examples ofsilicates include K₂SiO₃, Li₂SiO₃, CaSiO₃, ZrSiO₄ and Na₂SiO₃.

Examples of titanium oxides are TiO, Ti₂O₃ and TiO₂, and examples oftitanates include BaTiO₄, BaTiO₃, Ba₂Ti₉O₂₀, BaTi₅O₁₁, CaTiO₃, SrTiO₃,PbTiO₃, MgTiO₃, ZrTiO₃, SnTiO₄, Al₂TiO₅ and FeTiO₃.

An example of a zirconium oxide is ZrO₂, and examples of zirconatesinclude BaZrO₃, ZrSiO₄, PbZrO₃, MgZrO₃ and K₂ZrO₃.

Alternatively, it is also preferable for the peeling layer to beconstituted from silicon containing nitrogen. In the case of usingnitrogen-containing silicon as the peeling layer, nitrogen is dischargedupon irradiation with light, and this promotes the peeling in thepeeling layer.

C. Ceramics and dielectrics (ferroelectrics) such as PZT, PLZT, PLLZTand PBZT

D. Nitride ceramics such as silicon nitride, aluminum nitride andtitanium nitride

E. Organic macromolecular materials containing bonds such as —CH—,—CO-(ketone), —CONH-(amide), —NH-(imide), —COO-(ester), —N═N-(azo), or—CH═N-(Schiff) (these bonds are broken upon irradiation with light), inparticular any organic macromolecular material containing many suchbonds is suitable. Moreover, the organic macromolecular material maycontain aromatic hydrocarbon rings (one or more benzene rings, or afused ring) in the structural formula thereof.

Specific examples of such organic macromolecular materials includepolyolefins such as polyethylene and polypropylene, polyimides,polyamides, polyesters, polymethyl methacrylate (PMMA), polyphenylenesulfide (PPS), polyether sulfones (PESs), and epoxy resins.

F. Metals

Examples of metals include Al, Li, Ti, Mn, In, Sn, Y, La, Ce, Nd, Pr,Gd, and Sm, and also alloys containing one or more of the above.

Alternatively, the peeling layer can be constituted from ahydrogen-containing alloy. When a hydrogen-containing alloy is used inthe peeling layer, hydrogen is discharged upon irradiation with light,and this promotes the peeling in the peeling layer.

In addition, the peeling layer can also be constituted from anitrogen-containing alloy. In the case that a nitrogen-containing alloyis used in the peeling layer, nitrogen is discharged upon irradiationwith light, and this promotes the peeling in the peeling layer.

Furthermore, the peeling layer can be made to comprise a multi-layerfilm. The multi-layer film can be made to comprise, for example, anamorphous silicon film and a metal film formed on top of the amorphoussilicon film. The materials of the multi-layer film can be one or moretypes selected from the ceramics, metals and organic macromolecularmaterials described above. If in this way the peeling layer isconstituted from a multi-layer film, or a film in which different typesof material are combined, then as in the case of amorphous silicon,peeling in the peeling layer is promoted by the discharge of hydrogengas or nitrogen gas upon irradiation with light.

The thickness of the peeling layer 11 varies according to variousconditions such as the peeling objective, the composition of the peelinglayer 11, the layer constitution, and the formation method, butgenerally is preferably about 1 nm to 20 μm, more preferably about 10 nmto 2 μm, yet more preferably about 40 nm to 1 μm. This is because thehigher the film thickness of the peeling layer 11, the better theuniformity of the film formation can be maintained, and hence the lessthe tendency for unevenness to occur in the peeling, but on the otherhand, the thinner the film thickness, the lower the light power (amountof light) required to secure good peeling of the peeling layer 11, andmoreover the less time required to remove the peeling layer 11afterwards. Moreover, it is preferable for the film thickness of thepeeling layer 11 to be as uniform as possible.

There are no particular limitations on the method of forming the peelinglayer 11, with the method being selected as appropriate in accordancewith various conditions such as the film composition and the filmthickness. Examples include various vapor phase film formation methodssuch as CVD (including MOCVD, low-pressure CVD, ECR-CVD), vapordeposition, molecular beam (MB) deposition, sputtering, ion plating andPVD, various plating methods such as electroplating, immersion plating(dipping) and electroless plating, application methods such as theLangmuir-Blodgett (LB) method, spin coating, spray coating and rollcoating, various printing methods, a transfer method, an ink jet coatingmethod, and a powder jet method; moreover the formation can also becarried out by combining two or more of these methods.

For example, in the case that the peeling layer 11 is constituted fromamorphous silicon (a-Si), it is preferable to carry out the filmformation using CVD, in particular low-pressure CVD or plasma CVD.

Moreover, in the case that the peeling layer 11 is constituted from anorganic macromolecular material, or is constituted from a ceramic madethrough a sol-gel method, it is preferable to carry out the filmformation using an application method, in particular spin coating.

Moreover, although not shown in FIG. 4A, depending on the properties offthe first substrate 10 and the peeling layer 11, an intermediate layerfor improving the adhesion and so on between the first substrate 10 andthe peeling layer 11 may be provided between the first substrate 10 andthe peeling layer 11. This intermediate layer exhibits, for example, atleast one function out of those of a protective layer that protects thetransferred layer physically or chemically during manufacture or use, aninsulating layer, a barrier layer that prevents migration of componentsto or from the transferred layer, and a reflective layer.

The composition of the intermediate layer is selected as appropriate inaccordance with the purpose thereof. For example, in the case of anintermediate layer formed between the transferred layer and a peelinglayer constituted from amorphous silicon, an example is a silicon oxidesuch as SiO₂. Moreover, other examples of the composition of theintermediate layer are metals such as Pt, Au, W, Ta, Mo, Al, Cr and Ti,and alloys having the above as principal components thereof.

The thickness of the intermediate layer is determined as appropriate inaccordance with the purpose of forming the intermediate layer.Generally, about 10 nm to 5 μm is preferable, with about 40 nm to 1 μmbeing more preferable. This is because the higher the film thickness ofthe intermediate layer, the better the uniformity of the film formationcan be maintained, and hence the less the tendency for unevenness tooccur in the adhesion, but on the other hand, the thinner the filmthickness, the less the attenuation of light that should pass through asfar as the peeling layer.

Regarding the method of forming the intermediate layer, any of thevarious methods described earlier with regard to the peeling layer canbe used. The intermediate layer can either be formed as a single layer,or else two or more layers can be formed using a plurality of materialshaving compositions the same as or different to one another.

<Second Step>

Next, as shown in FIG. 4B, a plurality of transferred bodies 12 a areformed on the peeling layer 11. The layer constituted from the pluralityof transferred bodies 12 a is referred to as the transferred layer 12.Each of the transferred bodies 12 a is a passive device or an activedevice such as a TFT, or a circuit comprising a combination of suchdevices. That is, each of the transferred bodies 12 a is an individualdevice, or an independently functioning chip such as an integratedcircuit, or something in-between, i.e. a circuit part that does notfunction independently, but a circuit comprising this circuit partcombined with other devices or circuits functions independently. Thereare thus no limitations on the structure or size of the transferred body12 a. Regarding the transferred bodies 12 a, a plurality of devices orcircuits having the same function as one another may be formed, or aplurality of devices or circuits having different functions to oneanother may be formed, or a plurality of each of a plurality ofdifferent types of device or circuit may be formed.

In particular, in the present invention it is preferable to make thetransferred bodies be thin film devices, or integrated circuitsconstituted from thin film devices. In the manufacture of thin filmdevices, high-temperature processes are required to some extent, andhence the substrate on which the thin film devices are formed mustsatisfy various conditions as with the first substrate. On the otherhand, one can envisage that the final substrate that constitutes theproduct may be, for example, a flexile substrate. In this way, it ispossible that, in the manufacture of thin film devices, the requirementson the final substrate and the requirements on the substrate on whichthe thin film devices are manufactured may conflict with one another;however, if the transfer method of the present invention is used, thenit is possible to manufacture the thin film devices on a substrate thatsatisfies the manufacturing conditions, and then transfer the thin filmdevices onto a final substrate that does not satisfy the manufacturingconditions.

In addition to TFTs, examples of the thin film devices include thin filmdiodes, photoelectric transducers comprising silicon PIN junctions(photosensors, solar cells), silicon resistors, other thin filmsemiconductor devices, electrodes (e.g. transparent electrodes made ofITO, a mesa film or the like), switching devices, memories, actuatorssuch as piezoelectric elements, micromirrors (piezoelectric thin filmceramics), magnetic recording thin film heads, coils, inductors,resistors, capacitors, thin film materials having high magneticpermeability and micro-magnetic devices in which these are combined,filters, reflecting films, and dichroic mirrors.

FIG. 7A is a sectional view of a thin film device, showing an example ofa transferred body 12 a used in the present embodiment. This thin filmdevice has, for example, a constitution containing a thin filmtransistor T formed on an SiO₂ film (intermediate layer) 16. The thinfilm transistor T comprises source and drain regions 17 formed byintroducing an n-type impurity into a polysilicon layer, a channelregion 18, a gate insulator film 19, a gate electrode 20, a layerinsulation film 21, and electrodes 22 comprising aluminum or the like.The TFT is not limited to having such a constitution, but rather variousother structures can be used, for example a transistor on a siliconbase, or an SOI (silicon-on-insulator) structure.

Note that here an SiO₂ film is used as the intermediate layer 16 that isprovided in contact with the peeling layer 11, but it is also possibleto use another insulating film, for example an insulating film of Si₃N₄.The thickness of the SiO₂ film (intermediate layer) 16 is determined asappropriate in accordance with the purpose of forming the same and theextent to which the functions of the same are to be exhibited;nevertheless, generally, about 10 nm to 5 μm is preferable, with about40 nm to 1 μm being more preferable. The intermediate layer may beformed for any of various purposes, exhibiting, for example, at leastone function out of those of a protective layer that protects thetransferred body (thin film device) 12 a physically or chemically, aninsulating layer, a conducting layer, a laser light shielding layer, abarrier layer for preventing migration, and a reflective layer.

Note that in some cases the transferred body (thin film device) 12 a maybe formed directly on the peeling layer 11, without forming anintermediate layer 16.

FIGS. 7B and 7C relate to, as an example of a transferred body 12 a usedin the present embodiment, a static RAM which is manufactured using thetransfer method of the present invention and is an integrated circuitconstituted from thin film devices integrated together.

As shown in FIG. 7C, the integrated circuit 200 comprises the followingblocks: a memory cell array 201, an address buffer 202, a line decoder203, a word driver 204, an address buffer 205, a column decoder 206, acolumn selection switch 207, input/output circuitry 208, and controlcircuitry 209. Circuitry based on thin film transistors is formed ineach block, and wiring is formed between the blocks by patterning of ametal layer.

FIG. 7B is a sectional view of the integrated circuit 200 along thesection 7B-7B in FIG. 7C, and shows a region in which a p-type MOStransistor Tp and an n-type MOS transistor Tn are formed. As shown inthis sectional view, a device-forming layer 12 is formed on a peelinglayer 11. In the device-forming layer 12, a silicon layer 16 which actsas a foundation, a wiring layer 210 in which is formed the layerstructure of wiring and a large number of devices, and a protectivelayer 217 for protecting the upper surface, and so on are formed.

In the wiring layer 210, circuitry is formed through a well region 211,semiconductor regions 212 (corresponding to the regions 17 in FIG. 17A)that have impurities introduced therein and each form a source or adrain, a gate insulator film 214, a gate wiring film 213, a layerinsulation film 215, a metal wiring layer 216, and so on. The protectivelayer 217 is a film for protecting the wiring layer 210. Various circuitconfigurations can be envisaged for the integrated circuit 200; inaddition to the circuit configuration described above relating to amemory, one can also envisage application to, for example, pixel drivingcircuitry for a display apparatus, which is an electro-opticalapparatus. In this way, not only individual devices, but also integratedcircuits that are constituted by combining devices so that a specificfunction is attained, can be used as the transferred body 12 a.

FIG. 8 illustrates a method of manufacturing a TFT Tp and Tn asdescribed above through FIG. 7A, this being an example of a method ofmanufacturing a transferred body 12 a.

Firstly, as shown in ST10, an SiO₂ film is deposited on the firstsubstrate 10, thus forming an intermediate layer 16. Examples of themethod of forming the SiO₂ film are publicly known methods, for examplevapor phase deposition methods such as plasma enhanced chemical vapordeposition (PECVD), low pressure chemical vapor deposition (LPCVD), andsputtering. For example, an intermediate layer 16 of thickness 1 μm maybe formed using PECVD. Next, a semiconductor film 18 is formed using apublicly known method, for example LPCVD. At this time, if thesemiconductor film 18 if formed as a monocrystalline silicon film usinga μ-CZ method or the like as will be described later, then ahigh-performance semiconductor film can be obtained. The semiconductorfilm 18 is patterned, thus forming into the shape of the semiconductorregion of the TFT.

Next, as shown in ST11, an insulating film 19 of SiO₂ or the like isformed using a prescribed manufacturing method, for example electroncyclotron resonance PECVD (ECR-CVD), parallel plate PECVD, or LPCVD. Theinsulating film 19 acts as the gate insulator film of the TFT.

Next, as shown in ST12, a thin metal film of a prescribed gate metalsuch as tantalum or aluminum is formed by sputtering, and thenpatterning is carried out, thus forming a gate electrode 20. Impurityions that will act as donors or acceptors are then implanted using thegate electrode 20 as a mask, thus producing source and drain regions 17and a channel region 18 through self-alignment for the gate electrode20. For example, to produce an NMOS transistor, phosphorus (P) isimplanted as the impurity element into the source and drain regions to aprescribed concentration, for example 1×10¹⁶ cm⁻². A suitable energy isthen applied, for example irradiation is carried out using an XeClexcimer laser at an irradiation energy concentration of about 200 to 400mJ/cm², or else heat treatment is carried out at a temperature of about250° C. to 450° C., thus activating the impurity element.

Next, as shown in ST13, an SiO₂ film 21 of thickness about 500 nm isformed on the upper surfaces of the insulating film 19 and the gateelectrode 20 using a prescribed method, for example PECVD. Contact holesthat reach as far as the source and drain regions 17 are then formed inthe SiO₂ films 19 and 21, and source and drain electrodes 22 are formedby depositing aluminum or the like in the contact holes and around therims of the contact holes using a prescribed method such as sputtering.

Next, a description will be given regarding separation of thetransferred bodies 12 a in the transferred layer 12. Methods that can beenvisaged for separating the transferred bodies 12 a are a method inwhich separation is carried out by etching or the like, in particular amethod in which a separating structure is not provided (see the fourthembodiment), a method in which separation of only the peeling layer iscarried out (see the fifth embodiment), and a method in which aprescribed structure is formed on the transfer origin substrate, thusmaking it easier to carry out separation into the individual transferredbodies (see the sixth embodiment). Here, a method in which separationinto the individual transferred bodies 12 a is carried out completelywill be described.

In this method, to carry out the separation into the individualtransferred bodies 12 a, as shown in FIG. 5A, grooves 12 c that form arecessed structure are formed by wet etching, dry etching or the like atthe outer peripheries of the regions corresponding to the transferredbodies 12 a, thus leaving the transferred bodies 12 a behind as islandshapes. Regarding these grooves 12 c, in the thickness direction of thesubstrate, the whole of the transferred layer 12 is cut, and either thewhole (FIG. 5A) or part (FIG. 6) of the peeling layer 11 is cut. Thecuts may also be even shallower such that only the transferred layer 12is targeted. The grooves 12 c may be formed by etching as far as partway into the peeling layer 11 as in FIG. 6, or else the peeling layer 11may be completely etched, thus leaving behind island shapes in which thetransferred bodies 12 a and the peeling layer 11 immediately thereunderhave the same shape as each other, as shown in FIG. 5A. By creating anarrangement of the transferred bodies 12 a on the first substrate 10 inwhich identical transferred bodies 12 a are formed and then etching iscarried out at equal intervals, it becomes easy to transfer only desiredtransferred bodies 12 a in the peeling step (the fourth and fifthsteps).

By cutting the transferred layer 12 in advance, it becomes possible tocleanly peel off part of the peeling body along the shape of the regionin question, and hence damage to the region during the peeling can beprevented. Moreover, it becomes possible to ensure that the breaking ofthe transferred layer 12 accompanying the peeling does not extend toneighboring regions. Moreover, by inserting cuts in the film thicknessdirection in advance, it becomes possible to peel off a specifictransferred body 12 a even in the case that the adhesive strength of theadhesive layer that joins that transferred body 12 a to the transferdestination substrate is weak. Moreover, the outline of the regiontargeted for transfer will be well-defined, and hence alignment duringthe transfer between substrates will become easy.

Note that, as shown in FIG. 5B, over-etching may be carried out suchthat the area of bonding of the peeling layer 11 onto each transferredbody 12 a is less than the total area of the surface of the transferredbody joined to the peeling layer. This is because, by over-etching thepeeling layer 11 in this way, the area of the peeling layer becomes low,and hence when peeling is carried out by irradiating light onto thepeeling layer 11, the peeling can be carried out reliably with a lowforce, and moreover by reducing the size of the peeling layer 11, theamount of light energy required for the peeling can be reduced.

Furthermore, as shown in FIG. 5C, it is also possible to form grooves 12c by etching in only the transferred layer 12, leaving the peeling layer11 in one piece. So long as it is possible to apply energy uniformly tothe region in which a transferred body 12 a is formed, peeling of thepeeling layer 11 in this region can be made to occur reliably, and henceit will be possible to peel off only the desired transferred bodies evenif splits are not provided in the peeling layer 11 itself.

<Third Step>

Next, as shown in FIG. 9A, the surface of the first substrate 10 on theside on which the transferred bodies 12 a have been formed and thesurface of a final substrate (transfer destination substrate) 14 on theside on which some of the transferred bodies 12 a are to be transferredare placed together while carrying out alignment, and a pushing pressureis applied if necessary, thus selectively bonding only the transferredbodies 12 a to be transferred onto the final substrate 14 side via anadhesive layer 15.

There are no particular limitations on the final substrate 14, but anexample is a substrate (sheet), in particular a transparent substrate.This substrate may either be a flat sheet or a curved sheet. Moreover,the final substrate 14 may have properties such as heat resistance andcorrosion resistance that are inferior to those of the first substrate10. The reason for this is that, in the present invention, thetransferred bodies 12 a are formed on the first substrate 10 side andare subsequently transferred onto the final substrate 14, and hence theproperties, in particular the heat resistance, required of the finalsubstrate 14 do not depend on the temperature conditions and so onduring the formation of the transferred bodies 12 a.

Consequently, taking the maximum temperature during the formation of thetransferred bodies 12 a to be Tmax, a material having a glass transitiontemperature (Tg) or softening temperature lower than Tmax can be used asthe constituent material of the final substrate 14. For example, thefinal substrate 14 can be constituted from a material having a glasstransition temperature (Tg) or softening temperature of preferably 800°C. or less, more preferably 500° C. or less, yet more preferably 320° C.or less.

Moreover, regarding the mechanical properties of the final substrate 14,a final substrate 14 having some degree of rigidity (strength) ispreferable, but the final substrate 14 may also be flexible and elastic.If devices such as TFTs are transferred onto such a flexible finalsubstrate, then excellent properties that cannot be obtained with ahighly rigid glass substrate can be realized. Consequently, in thepresent invention, by manufacturing, for example, an electro-opticalapparatus using a flexible final substrate, an electro-optical apparatusthat is flexible, light, and strong against impact when dropped can berealized.

Examples of the constituent material of the final substrate 14 includevarious synthetic resins and various glass materials; in particular,various synthetic resins and normal cheap low-melting-point glassmaterials are preferable. In particular, a soda glass substrate is lowcost, and is thus an economically advantageous substrate. A soda glasssubstrate has a problem that alkaline components leach out upon heattreatment during TFT manufacture, and hence application toelectro-optical apparatuses such as active matrix type liquid crystaldisplays has been difficult hitherto. However, according to the presentinvention, the devices are transferred onto the final substrate afteralready having been completed, and hence the above-mentioned problemassociated with heat treatment is resolved. With the present invention,even substrates that have been difficult to use hitherto such as sodaglass substrates can thus be used in the field of active matrix typeelectro-optical apparatuses.

The above-mentioned synthetic resin may be either a thermoplastic resinor a thermosetting resin; examples include polyolefins such aspolyethylene, polypropylene, ethylene-propylene copolymers andethylene-vinyl acetate (EVA) copolymers, cyclic polyolefins, modifiedpolyolefins, polyvinyl chloride, polyvinylidene chloride, polystyrene,polyamides, polyimides, polyamidoimides, polycarbonates,poly(4-methylpentene-1), ionomers, acrylic resins, polymethylmethacrylate, acrylic-styrene copolymers (AS resins), butadiene-styrenecopolymers, polyo copolymers (EVOH), polyesters such as polyethyleneterephthalate (PET), polybutylene terephthalate (PBT) andpolycyclohexane terephthalate (PCT), polyethers, polyether ketones(PEKs), polyether ether ketones (PEEKs), polyetherimides, polyacetal(POM), polyphenylene oxides, modified polyphenylene oxides,polyarylates, aromatic polyesters (liquid crystalline polymers),polytetrafluoroethylene, polyvinylidene fluoride, other fluororesins,thermoplastic elastomers of various types such as styrene type,polyolefin type, polyvinyl chloride type, polyurethane type,fluororubber type and chlorinated polyethylene type, epoxy resins,phenol resins, urea resins, melamine resins, unsaturated polyesters,silicone resins, and polyurethanes, and copolymers, blends, polymeralloys and so on based on the above. One of the above synthetic resinscan be used, or two or more can be used in combination (for example, asa laminate of two or more layers).

Examples of the above-mentioned glass material include silicate glass(quartz glass), alkali silicate glass, soda-lime glass, potash-limeglass, lead (alkali) glass, barium glass, and borosilicate glass. Ofthese, ones other than silicate glass have a lower melting point thansilicate glass, are relatively easily shaped and processed, and arecheap, and are thus preferable.

In the case that a substrate constituted from a synthetic resin is usedas the final substrate 14, there are various advantages, for example alarge final substrate can be formed as a single body, manufacture iseasy even if the substrate has a complex shape having a curved surfaceor undulations, and the material cost and the manufacturing cost arelow. The use of a synthetic resin is thus advantageous for forminglarge, cheap devices (for example, liquid crystal displays).

The final substrate 14 may itself constitute an independent device as inthe case of a liquid crystal cell, or may constitute part of a device asin the case of a color filter, an electrode layer, a dielectric layer,an insulating layer, or a semiconductor device.

Furthermore, the final substrate 14 may also be a material such as ametal, a ceramic, stone, wood or paper, and may be on any chosen surfaceof some article (e.g. on a surface of a watch, on a surface of an airconditioner, or on a printed circuit board), or may be on the surface ofa structure such as a wall, a pillar, a ceiling or a windowpane.

Preferable examples of the adhesive constituting the adhesive layer 15include various curable adhesives, for example reactive curingadhesives, thermosetting adhesives, photo-curing adhesives such asUV-curing adhesives, and anaerobic curing adhesives. The adhesive mayhave any constitution, for example epoxy type, acrylate type, siliconetype and so on. Moreover, in the case of using a commercially soldadhesive, the viscosity of the adhesive may be adjusted so as to besuitable for application by adding an appropriate solvent.

In the present embodiment, the adhesive layer 15 is formed on only thetransferred bodies 12 a to be transferred, or on the final substrate 14in only places corresponding to the transferred bodies 12 a to betransferred. Such local formation of the adhesive layer 15 can becarried out using any of various printing methods or liquid dischargemethods. Liquid discharge methods include, for example, a piezoelectricjetting method in which liquid is discharged using the deformation ofpiezoelectric bodies, and a method in which liquid is discharged byforming bubbles through heat. In the present embodiment, an example isgiven in which the adhesive layer 15 is formed using an ink jet coating(liquid discharge) method.

FIG. 10 is a perspective view illustrating an ink jet type thin filmformation apparatus that can be used for forming the adhesive layer 15on adhesive application parts on either the transferred bodies 12 a tobe transferred or else the final substrate 14 in places corresponding tothe transferred bodies 12 a to be transferred. The thin film formationapparatus 30 comprises an ink jet mechanism 32 having an ink jet head 31that discharges a liquid adhesive L onto a substrate (the firstsubstrate 10 or the final substrate 14) SUB, a shifting mechanism 33 forshifting the ink jet head 31 and the substrate SUB relative to oneanother, and a control part C for controlling the ink jet mechanism 32and the shifting mechanism 33.

The shifting mechanism 33 is constituted from a head supporting part 35that supports the ink jet head 31 so that the ink jet head 31 facesdownwards above the substrate SUB, which is placed on a substrate stage34, and a stage driver 36 that shifts the substrate stage 34 and hencealso the final substrate SUB in the X- and Y-directions relative to theink jet head 31. The head supporting part 35 comprises a mechanism suchas a linear motor that is capable of shifting, at any chosen shiftingspeed, and positioning the ink jet head 31 relative to the substrate SUBin the vertical (Z-axis) direction, and a mechanism such as a steppingmotor that is capable of rotating the ink jet head 31 about a verticalcentral axis and thus setting the angle of the ink jet head 31 relativeto the substrate SUB therebelow to be any chosen angle.

The stage driver 36 comprises a θ-axis stage 37 that is capable ofrotating the substrate stage 34 about a vertical central axis and thussetting the angle of the substrate stage 34 relative to the ink jet head31 thereabove to be any chosen angle, and stages 39 a and 39 b thatcarry out shifting and positioning of the substrate stage 34 inhorizontal directions (the X-direction and the Y-direction respectively)relative to the ink jet head 31. The O-axis stage 37 has a drivingsource such as a stepping motor, and the stages 39 a and 39 b each has adriving source such as a linear motor.

The ink jet mechanism 32 comprises the ink jet head 31, and a tank Tthat is connected to the ink jet head 31 via a flow path 38. The tank Tstores the liquid adhesive L, and the liquid adhesive L is fed to theink jet head 31 via the flow path 38. Due to this constitution, the inkjet mechanism 32 is such that liquid adhesive L stored in the tank T isdischarged from the ink jet head 31, and is thus applied onto the finalsubstrate SUB.

The ink jet head 31 is, for example, such that liquid chambers arecompressed through piezoelectric elements and liquid is dischargedthrough the resulting pressure wave, and has a plurality of nozzles(nozzle holes) arranged in one or a plurality of rows.

Describing an example of the structure of the ink jet head 31, as shownin FIG. 11A, the ink jet head 31 comprises, for example, a stainlesssteel nozzle plate 40 and a diaphragm 41, with the two being joinedtogether via a partitioning member (reservoir plate) 42. A plurality ofspaces 43 and a liquid reservoir 44 are formed by the partitioningmember 42 between the nozzle plate 40 and the diaphragm 41. The insideof each of the spaces 43 and the liquid reservoir 44 is filled with theliquid adhesive L, and each of the spaces 43 communicates with theliquid reservoir 44 via a supply port 45. Moreover, nozzles 46 forejecting the liquid adhesive L from the spaces 43 are formed in thenozzle plate 40. Furthermore, a hole 47 for feeding the liquid adhesiveL into the liquid reservoir 44 is formed in the diaphragm 41.

Moreover, as shown in FIG. 11B, piezoelectric elements 48 are joinedonto the surface of the diaphragm 41 on the opposite side to the surfacefacing the spaces 43. Each piezoelectric element 48 is positionedbetween a pair of electrodes 49, and is constituted so as to bend suchas to project outwards upon passing a current. Due to this constitution,the diaphragm 41, which is joined to each piezoelectric element 48,forms a single body with the piezoelectric element 48 and thus alsobends outwards at the same time, whereupon the volume of the space 43increases. An amount of the liquid adhesive L corresponding to theincrease in the volume in the space 43 thus flows into the space 43 fromthe liquid reservoir 44 via the supply port 45. From this state, if thepassing of the current to the piezoelectric element 48 is stopped, thenthe piezoelectric element 48 and the diaphragm 41 both return to theiroriginal shapes. The space 43 thus also returns to its original volume,and hence the pressure of the liquid adhesive L inside the space 43increases, and thus a drop of the liquid adhesive L is discharged fromthe nozzle 46 towards the substrate SUB.

Note that, as the liquid adhesive discharge method, as mentionedearlier, in addition to a piezoelectric jetting method usingpiezoelectric elements 48 as described above, it is also possible toadopt, for example, a method in which electricity-to-heat converters areused as the energy generating elements, and the liquid is discharged byforming bubbles.

The control part C is constituted from a CPU such as a microprocessorthat carries out control of the apparatus as a whole, a computer havingfunctions of inputting and outputting various signals, or the like. Byelectrically connecting the control part C to each of the ink jetmechanism 32 and the shifting mechanism 33 as shown in FIG. 10, at leastone of, and preferably both of, the discharging operation of the ink jetmechanism 32 and the shifting operation of the shifting mechanism 33 canbe controlled. According to this constitution, there is a function ofbeing able to change the application conditions of the liquid adhesive Land thus accurately control the position of formation and the filmthickness of the adhesive layer 15 formed. Specifically, the controlpart C may have, as functions for controlling the film thickness, acontrol function of changing the discharge spacing of the applied liquidL, a control function of changing the amount of the applied liquid Ldischarged per dot, a control function of changing the orientation ofthe nozzles 46, and changing the shifting direction and angle θ usingthe shifting mechanism 33, a control function of setting the applicationconditions for each application in the case that application is carriedout repeatedly in the same position on the substrate SUB, and a controlfunction of dividing the substrate SUB into a plurality of regions andsetting the application conditions for each region. Furthermore, thecontrol part C may have, as control functions for changing theabove-mentioned discharge spacing, a control function of changing thedischarge spacing by changing the relative speed of shifting between thesubstrate SUB and the ink jet head 31, a control function of changingthe discharge spacing by changing the time interval between dischargesduring the shifting, and a control function of changing the dischargespacing by setting as desired some of the plurality of nozzles todischarge the liquid adhesive L simultaneously.

According to this ink jet type thin film formation apparatus 30, byplacing the first substrate 10 on which a large number of transferredbodies 12 a have been formed or the final substrate 14 on the substratestage 34, and applying the liquid adhesive L from the ink jet head 31 indesired regions only, it is possible to form the adhesive layer 15efficiently in a large number of regions.

Next, a description will be given of the formation of banks, which arepreferable when forming the adhesive layer using the ink jet coatingmethod. To accurately form the adhesive layer using the ink jet coatingmethod on only the desired adhesive application parts, i.e. on only thetransferred bodies 12 a to be transferred, or on only the parts of thefinal substrate 14 corresponding to the transferred bodies 12 a to betransferred, it is preferable to provide means for preventing the liquidadhesive L applied onto the adhesive application parts from running outonto other parts. One suitable means for preventing the liquid adhesiveL from running out onto such other parts is to form banks 12 b(partitioning walls) at peripheral parts on the transferred bodies 12 a.FIG. 12A is a perspective view illustrating the structure after theliquid adhesive L has been placed inside the banks 12 b, and FIG. 12B isan enlarged sectional view of the region that has been filled with theliquid adhesive L. Note that in the example shown in FIGS. 12A and B,the constitution has been made to be such that the banks 12 b areprovided on the transferred bodies 12 a, but it is also possible to formbanks on the final substrate 14 side to enable the liquid adhesive L tobe placed in the regions of the final substrate 14 where the transferredbodies 12 a are to be disposed. The banks 12 b can be formed using thesame material and manufacturing method as with well-known banks(partitioning walls) in the field of, for example, manufacturing colorfilters for liquid crystal displays.

Moreover, an example of another means for preventing the liquid adhesiveL from running out onto parts other than the adhesive application partsis providing an adhesive-repellent layer on the parts other than theadhesive application parts, or providing an adhesive-attractive layer onthe adhesive application parts and providing an adhesive-repellent layeron the parts other than the adhesive application parts. Regarding thematerials of the adhesive-repellent layer and the adhesive-attractivelayer, materials that have suitable liquid-repellent properties andliquid-attractive properties towards the liquid adhesive L used can beselected as appropriate in accordance with the type of the liquidadhesive L used. It is preferable to use a SAM (self-assembledmonolayer) film using a fluororesin such as hexafluoropolypropylene.

<Fourth Step>

Next, as shown in FIG. 9B, light L is selectively irradiated onto thepeeling layer 11 at only the transferred bodies 12 a to be transferred,this being from the first substrate 10 side of the joined bodycomprising the first substrate 10 and the final substrate 14 joinedtogether via a large number of the transferred bodies 12 a, wherebypeeling (in-layer peeling and/or interfacial peeling) is made to occurat the peeling layer 11 only where the peeling layer 11 supports thetransferred bodies 12 a to be transferred.

The principles by which in-layer peeling and/or interfacial peeling ofthe peeling layer 11 occurs are that ablation of the constituentmaterial of the peeling layer 11 occurs, a gas contained in the peelinglayer 11 is discharged, and a phase change such as melting orevaporation occurs immediately after the irradiation.

Here, ‘ablation’ refers to the fixing material (the constituent materialof the peeling layer 11) that has absorbed the irradiated light beingexcited optically or thermally, and hence bonds between atoms ormolecules at the surface of or inside the fixing material breaking,resulting in discharge; this is manifested primarily as a phenomenon inwhich all or part of the constituent material of the peeling layer 11undergoes a phase change such as melting or evaporation. Moreover, thebonding strength may drop due to minute bubbles being formed through thephase change.

Whether it is in-layer peeling or interfacial peeling or both thatoccurs in the peeling layer 11 depends on the composition of the peelinglayer 11 and various other factors, for example the irradiationconditions such as the type, wavelength, intensity and penetration depthof the light irradiated,

The irradiated light L may be any that brings about in-layer peelingand/or interfacial peeling of the peeling layer 11; examples includeX-rays, UV rays, visible light, infrared rays (heat rays), laser light,millimeter waves, microwaves, electron rays, and radiation (α-rays,β-rays, γ-rays).

Of these, from the standpoint of peeling (ablation) of the peeling layer11 occurring readily and local irradiation with high precision beingpossible, laser light is preferable. Laser light is coherent, and henceis suitable for irradiating high-output-power pulsed light onto thepeeling layer via the first substrate 10, thus bringing about peeling atthe desired places with high precision. By using laser light, thepeeling off of the transferred bodies 12 a can thus be carried outeasily and reliably.

Examples of laser apparatuses for generating such laser light includevarious gas lasers and solid state lasers (semiconductor lasers); it ispreferable to use an excimer laser, an Nd-YAG laser, an Ar laser, a CO₂laser, a CO laser, an He-Ne laser or the like.

The laser light preferably has a wavelength of 100 to 350 nm. By usingsuch short-wavelength laser light, the precision of the lightirradiation can be raised, and the peeling in the peeling layer 11 canbe carried out effectively.

Examples of lasers that generate laser light satisfying the aboveconditions include excimer lasers. Excimer lasers are gas lasers forwhich high-energy laser light output in the short-wavelength UV regionis possible; by using a combination of a noble gas (Ar, Kr, Xe etc.) anda halogen gas (F₂, HCl etc.), laser light of any of four representativewavelengths can be outputted (XeF=351 nm, XeCl=308 nm, KrF=248 nm,ArF=193 nm). Because an excimer laser outputs a high energy in alow-wavelength region, ablation in the peeling layer 11 can be broughtabout in an extremely short time, and hence peeling of the peeling layer11 can be carried out with virtually no temperature increase in theadjacent final substrate 14 and first substrate 10, and no degradationof or damage to the transferred bodies 12 a and the like.

Alternatively, in the case of producing a separation property bybringing about gas discharge or a phase change such as evaporation orsublimation in the peeling layer 11, the wavelength of the laser lightirradiated is preferably from about 350 to about 1200 nm.

In the case of laser light of such a wavelength, a laser light source orirradiation apparatus widely used in the field of general processingsuch as a YAG or gas laser can be used, and hence the irradiation withlight can be carried out cheaply and easily. Moreover, by using suchlaser light having a wavelength in the visible region, the firstsubstrate 10 need transmit only visible light, and hence the freedom tochoose the first substrate 10 can be broadened.

Moreover, the energy density of the laser light irradiated, inparticular the energy density in the case of an excimer laser, ispreferably made to be about 10 to 5000 mJ/cm², more preferably about 100to 500 mJ/cm². Moreover, the irradiation time is preferably made to beabout 1 to 100 nsec, more preferably about 10 to 100 nsec. This isbecause the higher the energy density and/or the longer the irradiationtime, then the more readily ablation occurs, but the lower the energydensity and/or the shorter the irradiation time, then the more the riskof there being adverse effects on the transferred bodies 12 a or thelike due to irradiated light passing through the peeling layer 11 can bereduced.

Note that as a measure against irradiated light passing through thepeeling layer 11 and thus reaching and exerting adverse effects on thetransferred bodies 12 a, there is, for example, a method in which ametal film of tantalum (Ta) or the like is formed on the peeling layer11. Laser light that passes through the peeling layer 11 is completelyreflected at the interface with the metal film, and hence there are noadverse effects on the transferred bodies 12 a thereabove.

It is preferable for the irradiated light such as laser light to beirradiated such that the intensity thereof is uniform. The direction ofirradiation of the irradiated light is not limited to being thedirection perpendicular to the peeling layer 11, but rather may also bea direction inclined at a certain prescribed angle relative to thepeeling layer 11.

Moreover, in the case that the area of the peeling layer 11 is greaterthan the area of one irradiation of the irradiated light, it is possibleto irradiate the irradiated light over the whole of the peeling layer 11by dividing the irradiation into a plurality of times. Moreover, thesame place may be irradiated two or more times. Moreover, irradiationmay be carried out two or more times, with irradiated light (laserlight) of different types or different wavelengths (wavelength bands)being irradiated onto the same region or different regions.

<Fifth Step>

Next, as shown in FIG. 9C, forces are applied to the first substrate 10and the final substrate 14 in a direction so as to separate the two,thus removing the first substrate 10 from the final substrate 14.Through the fourth step described above, the peeling layer 11 on thetransferred bodies 12 a to be transferred onto the final substrate 14has been peeled off from the transferred bodies 12 a, and hence thesetransferred bodies 12 a to be transferred are disconnected from thefirst substrate 10 side. Moreover, the transferred bodies 12 a to betransferred have been joined to the final substrate 14 through theadhesive layer 15. Note that, in the fourth step described above, it ispreferable to bring about complete peeling of the peeling layer 11 fromeach of the transferred bodies 12 a to be transferred, but it is alsopossible to bring about peeling of only part of the peeling layer 11from each of the transferred bodies 12 a to be transferred, so long asthe adhesive strength of the adhesive layer 15 to the transferred bodies12 a to be transferred wins out over the joining strength of theremaining parts of the peeling layer 11, and hence when the firstsubstrate 10 and the final substrate 14 are pulled apart, thetransferred bodies 12 a to be transferred are reliably transferred ontothe final substrate 14 side.

In this way, whether or not the transferred bodies are transferred isdetermined by the relative strength relationship between the bondingstrength of the peeling layer, which has been weakened through thepeeling of the peeling layer, and the bonding strength of the adhesivelayer that has been applied to the transferred bodies. If the peeling ofthe peeling layer is sufficient, then transfer of the transferred bodieswill be possible even if the bonding strength of the adhesive layer isweak, and moreover, on the other hand, even if the peeling of thepeeling layer is somewhat insufficient, transfer of the transferredbodies will be possible if the bonding strength of the adhesive layer ishigh.

As shown in FIG. 9C, by pulling the first substrate 10 away from thefinal substrate 14, transferred bodies 12 a are transferred into aplurality of positions on the final substrate 14. Transferred bodies 12a that are not transferred remain on the first substrate 10.

There are cases that peeling residue from the peeling layer 11 remainsattached to the transferred bodies 12 a after transfer onto the finalsubstrate 14, and it is preferable to completely remove this peelingresidue. The method used for removing the residual parts of the peelinglayer 11 can be selected as appropriate from methods such as washing,etching, ashing, polishing and so on, or a combination thereof.

Similarly, in the case that peeling residue from the peeling layer 11remains attached to the surface of the first substrate 10 after thetransfer of the transferred bodies 12 a has been completed, this can beremoved as described above for the final substrate 14. The firstsubstrate 10 can thus be reused (recycled). By reusing the firstsubstrate 10 in this way, wastefulness can be avoided with regard to themanufacturing cost. This is particularly significant in the case that afirst substrate 10 made from an expensive material such as quartz glassor a scarce material is used.

Note that it is possible to apply the third invention described earlierto the present embodiment, i.e. repeat the third to fifth stepsdescribed above on the first substrate 10 having some of the transferredbodies 12 a remaining thereon, thus transferring a large number oftransferred bodies 12 a onto separate final substrates 14 one afteranother.

Specifically, the first and second steps described above correspond tothe manufacture of the transfer origin substrate (the first substrate 10and the transferred layer 12) of S1 in FIG. 3, the third step describedabove corresponds to the application of the adhesive 15 and thealignment of the transfer destination substrate (the final substrate 14)of S2 and S3 in FIG. 3, the fourth step described above corresponds tothe partial irradiation with light of S4 in FIG. 3, and the fifth stepdescribed above corresponds to the peeling step of S5 in FIG. 3. Eachtime transferred bodies 12 a are transferred, a new final substrate 14is aligned as a transfer destination substrate and adhesion is carriedout (S3), irradiation of light is carried out selectively (S4), and thenthe transferred bodies 12 a to be transferred are peeled off along withthe final substrate 14 (S5), i.e. the sequence of steps S2 to S6 isrepeated as long as transferred bodies 12 a still remain on the firstsubstrate 10 (the transfer origin substrate). In the case of applyingthe third invention and transferring to a plurality of final substrates14 one after another in this way, and thus applying the presentmanufacturing method to, for example, the manufacture of an activematrix board for an electro-optical apparatus, it is possible toefficiently dispose in scattered locations minute transferred bodies 12a such as TFTs for each of a large number of pixels on a substrate.

Through the steps described above, a large number of transferred bodies12 a to be transferred can be selectively transferred onto a finalsubstrate 14. Afterwards, the transferred bodies 12 a that have beentransferred can be connected to wiring on the final substrate 14 throughwiring formed using any of various methods as will be described later,for example an ink jet coating method, photolithography, or a coatingmethod combined with liquid repellency treatment using an SAM(self-assembled monolayer) film, a protective film can be formed ifdesired, and so on.

According to the transfer method of the present first embodiment, alarge number of transferred bodies 12 a that are to be disposed inscattered locations with spaces therebetween on a final substrate 14 canbe manufactured concentrated together on a first substrate 10, and hencecompared with the case that the transferred bodies 12 a are formed onthe final substrate 14 directly, the area efficiency in the manufactureof the transferred bodies 12 a can be greatly improved, and a finalsubstrate 14 on which a large number of transferred bodies 12 a aredisposed in scattered locations can be manufactured efficiently andcheaply.

Moreover, according to the transfer method of the present embodiment, itbecomes easy to carry out selection and elimination before transfer on alarge number of transferred bodies 12 a that have been manufacturedconcentrated together on a first substrate 10, and hence the productyield can be improved.

Furthermore, according to the transfer method of the present embodiment,transferred bodies 12 a that are either the same as or different to oneanother can be built up on one another and combined, and hence bycombining devices that are manufactured under different processconditions to one another, it is possible to provide devices having alayered structure for which manufacture has been difficult hitherto, andmoreover devices having a three-dimensional structure can bemanufactured easily.

Moreover, according to the present embodiment, the transferred bodiescan be aligned accurately on the final substrate 14, and hence, unlikewith microstructures used in a conventional microstructure disposingtechnique, extra symmetrical circuit structures becomes unnecessary, andextremely small blocks in which only the minimum required circuitry isformed can be produced; consequently, an extremely large number oftransferred bodies 12 a can be manufactured concentrated together on thefirst substrate 10, and the cost per device can be greatly reduced.

Moreover, because minute transferred bodies 12 a can be disposedaccurately in prescribed positions on the final substrate 14,transferred bodies 12 a having excellent ability to follow curvature ofthe substrate can be provided. Furthermore, mounting on a curved surfacesuch as that of a curved display or an automobile body becomes possible.

Moreover, according to the present embodiment, because minutetransferred bodies 12 a can be disposed accurately in prescribedpositions on the final substrate 14, devices can be disposed in minuteregions for which device installation has been impossible or costlyhitherto, for example at the tips of optical fibers, and hence the scopeof application of the devices can be expanded.

Moreover, according to the present embodiment, because grooves areformed by etching at the boundaries between the regions of thetransferred bodies 12 a, the film thickness becomes thinner at theboundary parts, and hence separation and peeling can be carried outeasily along the boundary parts for each transferred body, and thus itbecomes possible to prevent damage to the transferred bodies during thepeeling.

Second Embodiment

FIGS. 13A to 13D are drawings for explaining a second embodiment(transfer method) of the present invention. As with the first embodimentdescribed above, the present second embodiment comes under the firstinvention, which relates to carrying out partial transfer once, but thepresent second embodiment differs from the first embodiment inparticular in that, in the third step, the transferred bodies 12 a to betransferred are joined to the final substrate 14 through a combinationof a UV-curing resin and partial irradiation with UV light.

The first step and the second step can be carried out as in the firstembodiment described above with regard to the methods of operation,components and materials used, formation conditions and so on, and hencethe description of these steps will be omitted here.

In this second embodiment, a first substrate 10 having a large number oftransferred bodies 12 a formed thereon, and a final substrate 14 havingan adhesive layer 52 comprising a UV-curing resin applied over the wholeof the surface thereof on the side onto which the transferred bodies 12a are to be transferred, are prepared through the first step (see FIGS.4A and B) and the second step (see FIGS. 5A to C) of the firstembodiment described above.

Then, as shown in FIG. 13A, the first substrate 10 is placed onto thefinal substrate 14, while carrying out alignment such that thetransferred bodies 12 a to be transferred are aligned with prescribedpositions on the final substrate 14.

There are no particular limitations on the UV-curing resin used in theadhesive layer 52, so long as the UV-curing resin is cured uponirradiation with UV light and is capable of joining the transferredbodies 12 a disposed in contact with the adhesive layer 52 onto thefinal substrate 14 side with a sufficient adhesive strength; a UV-curingresin selected as appropriate from various commercially sold ones can beused. The method of applying the UV-curing resin onto the finalsubstrate 14 can also be selected as appropriate from various well-knowncoating methods; preferably, a spin coating method or the like is used,whereby the adhesive layer 52 can easily be formed to the desired filmthickness. The film thickness of the adhesive layer 52 can be changed asappropriate in view of the size of the transferred bodies 12 a, theadhesive strength of the adhesive used, and so on.

Next, as shown in FIG. 13B, partial irradiation with UV light, i.e.irradiation of UV light onto the adhesive layer 52 only in places wherethe adhesive layer 52 is in contact with transferred bodies 12 a to betransferred, is carried out via the final substrate 14, thus curing theadhesive layer 52 in these places. The UV light used should be such thatit is possible to cure the adhesive layer 52 comprising the UV-curingresin only at the irradiated parts, and it is preferable to adjust theirradiation conditions such as the wavelength, the light intensity andthe irradiation time as appropriate in accordance with the properties ofthe final substrate 14 (the thickness, the transmissivity to the UVlight etc.) and the type of the UV-curing resin used. The irradiation ofthe UV light onto the adhesive layer 52 only in the places where theadhesive layer 52 is in contact with the transferred bodies 12 a to betransferred can be carried out easily and reliably by a method such asdisposing a mask on the surface of the final substrate 14 on theopposite side to the surface on which the adhesive layer 52 is formed.

After the irradiation with UV light as shown in FIG. 13B, uncuredUV-curing resin on the final substrate 14 is washed off using a suitablesolvent such as water. As a result, the state becomes such that, out ofthe large number of transferred bodies 12 a on the first substrate 10side, only those transferred bodies 12 a to be transferred onto thefinal substrate 14 side are joined to the final substrate 14 side by anadhesive layer 54 comprising the cured resin.

Next, as shown in FIG. 13C, as in the fourth step (see FIG. 9B) in thefirst embodiment described above, partial irradiation with laser light Lis carried out via the first substrate 10 onto the peeling layer 11 onlywhere the peeling layer 11 is in contact with the transferred bodies 12a to be transferred, thus bringing about peeling of the peeling layer 11where the irradiation with light is carried out. The details are as withthe first embodiment described above and will thus be omitted here.

Next, as shown in FIG. 13D, as in the fifth step (see FIG. 9C) in thefirst embodiment described above, forces are applied to the firstsubstrate 10 and the final substrate 14 in a direction so as to separatethe two, thus removing the first substrate 10 from the final substrate14. The details are as with the first embodiment described above andwill thus be omitted here.

It is possible to apply the third invention to the present secondembodiment, i.e. repeat the third to fifth steps; this is as with thefirst embodiment described above.

With the transfer method according to the present second embodiment,effects equivalent to those of the first embodiment described above canbe obtained; furthermore, the UV-curing resin can be applied over thewhole surface of the final substrate 14, and by irradiating with UVlight only in certain places it is possible to join only the transferredbodies 12 a to be transferred onto the final substrate 14 easily andreliably; the manufacturing process can thus be simplified.

Third Embodiment

FIGS. 14A and 14B are drawings for explaining a third embodiment(transfer method) of the present invention. As with the first embodimentdescribed above, the present third embodiment comes under the firstinvention, which relates to carrying out partial transfer once, but thepresent third embodiment differs from the first embodiment in particularin that, in the third step, the transferred bodies 12 a to betransferred are joined to the final substrate 14 through a combinationof an adhesive sheet 56 comprising a heat-fusing adhesive disposedbetween the final substrate 14 and the transferred bodies 12 a andpartial irradiation with laser light L1.

The first step and the second step can be carried out as in the firstembodiment described above with regard to the methods of operation,components and materials used, formation conditions and so on, and hencethe description of these steps will be omitted here.

In this third embodiment, adhesive (heat-fusing) sheets 56 are usedinstead of the adhesive layer 15 used in the first embodiment describedabove. Regarding this adhesive sheet 56, one of, for example, apolyolefin resin (polyethylene, polypropylene, EVA etc.), an epoxyresin, a fluororesin, a heat-fusing polyester resin such as acarboxyl-group-containing acrylic resin, an acrylate resin, or asilicone resin, or two or more of these mixed together, can be used. Thethickness of the adhesive sheet 56 is made to be about 0.1 to 100 μm,preferably about 1 to 50 μm. There are no particular limitations on themethod of disposing the adhesive sheet 56; the adhesive sheet 56 may bebonded to the final substrate 14 side or the first substrate 10 side, ormay be sandwiched in removable fashion between the final substrate 14and the first substrate 10.

It is preferable to supply such adhesive sheets 56 using, for example, atape carrier F as shown in FIG. 15. The tape carrier F is constitutedsuch that the adhesive sheets 56 are supported in peelable fashion on aflexible film, are stored with the tape carrier F wound up, and can besupplied continuously using an assembly apparatus (not shown). Each tapecarrier F is an adhesive layer formed in a sheet shape, and is formedwith a suitable area and shape in accordance with the substrate size. Inparticular, in the case that the transferred bodies 12 a are fairlylarge integrated circuits or IC chips, the area of the adhesive sheets56 can be made to correspond to the area and shape of the regions fortransfer corresponding to the transferred bodies 12 a. By pushing anadhesive sheet 56 onto a region targeted for transfer using the tapecarrier F, the adhesive sheet 56 peels off from the adhesive sheet 56 towhich the bonding is weak and is bonded onto the region targeted fortransfer of the transferred layer 12. By using such a tape carrier, itbecomes possible to supply the adhesive sheets continuously, and hencethe manufacturing efficiency can be improved.

Moving on, in FIG. 14A, after the first substrate 10 having the largenumber of transferred bodies 12 a formed thereon and the final substrate14 have been placed on top of one another with an adhesive sheet 56 asdescribed above therebetween, partial irradiation with laser light L1onto only the transferred bodies 12 a to be transferred is carried outfrom the first substrate 10 side. The partial irradiation with the laserlight L1 can be carried out either by irradiating the laser light L1onto the whole of the first substrate 10 with a mask disposed on thefirst substrate 10, or by scanning a laser beam having a small area ofirradiation over the first substrate 10. As a result of the partialirradiation with the laser light L1, heat generated in the peeling layer11, which acts as a light-absorbing layer, causes fusing of the adhesivesheet 56 in places, and hence the state become such that only thetransferred bodies 12 a to be transferred are joined to the finalsubstrate 14 by an adhesive layer 58.

Next, as shown in FIG. 14B, using the same method as in FIG. 14A,partial irradiation with laser light L2 onto only the transferred bodies12 a to be transferred is carried out from the first substrate 10 side,thus bringing about peeling of the peeling layer 11 only where thepeeling layer 11 supports the transferred bodies 12 a to be transferredon the first substrate 10 side. After this, the first substrate 10 andthe final substrate 14 are pulled apart, whereby the transferred bodies12 a to be transferred are transferred into the prescribed positions onthe final substrate 14.

In the present embodiment, the irradiation of the first laser light L1for fusing the adhesive sheet 56 in places as shown in FIG. 14A, and theirradiation of the second laser light L2 for bringing about peeling ofthe peeling layer 11, can be carried out using the same light, or usingdifferent light. Furthermore, in the present embodiment, after the firstsubstrate 10 on which the large number of transferred bodies 12 a havebeen formed and the final substrate 14 have been placed on top of oneanother with the adhesive sheet 56 therebetween, it is possible to jointhe transferred bodies 12 a to be transferred to the final substrate 14and at the same time bring about peeling of the peeling layer 11 througha single instance of irradiation with light, and hence the third andfourth steps described earlier can be carried out simultaneously. Bycarrying out the third and fourth steps simultaneously in this way, thetransfer process can be simplified, and thus the manufacturingefficiency can be further improved.

It is possible to apply the third invention to the present thirdembodiment, i.e. repeat the third to fifth steps; this is as with thefirst embodiment described earlier.

With the transfer method according to the present third embodiment,effects equivalent to those of the first embodiment described earliercan be obtained. Furthermore, by using an adhesive sheet as an adhesivelayer and supplying the adhesive sheets continuously, the transferprocess can be simplified, and thus the manufacturing efficiency can befurther improved.

Fourth Embodiment

FIGS. 16A to 16E are drawings for explaining a fourth embodiment(transfer method) of the present invention. In each of the embodimentsdescribed above, the transferred bodies 12 a have been separated fromone another, but in the present fourth embodiment, an example is shownin which transfer is carried out without particularly separating thetransferred bodies 12 a from one another.

The various steps can be carried out roughly as in the first and thirdembodiments described above with regard to the methods of operation,components and materials used, formation conditions and so on, and hencewhere the descriptions overlap the same reference numeral will be usedand the redundant description will be omitted.

As shown in FIG. 16A, after the transferred layer 12 has been formed onthe peeling layer 11, in the present embodiment, the transferred layeris not particularly separated into parts by etching or the like. Thetransferred body 12 a to be transferred in the transferred layer 12 iscontained in a transfer-targeted region. Because a separation method isnot used, it is possible that breaking along the transfer-targetedregion may not occur cleanly when the peeling off of the transferredbody is carried out. It is thus preferable, for example, to provide aforbidden region in which devices, circuitry and wiring are not providedin the vicinity of the boundaries of the transfer-targeted region.

Next, as shown in FIG. 16B, an adhesive layer is provided in the regioncorresponding to the transferred body 12 a to be selectively transferredout of the transferred layer 12. An adhesive layer as used in the firstor second embodiments may be used, but here it has been decided toprovide an adhesive sheet 56 as used in the third embodiment.

Next, as shown in FIG. 16C, after alignment has been carried out, thefirst substrate 10 and the final substrate 14 are pushed together, thusbonding the final substrate 14 to the adhesive sheet 56. The firstsubstrate 10 and the final substrate 14 are thus bonded (joined)together at a certain place.

Next, an excimer laser or the like is irradiated onto the correspondingregion of the peeling layer 11 under the transfer-targeted region fromthe rear side of the first substrate 10, thus bringing about partialpeeling, i.e. peeling in this region, of the peeling layer 11.

Next, as shown in FIG. 16D, the final substrate 14 is pulled away fromthe first substrate 10, whereupon breaking occurs at the outer peripheryof the transfer-targeted region of the transferred body 12 a that isbonded to the final substrate 14 through the adhesive sheet 56, andhence the transferred body 12 a is transferred from the first substrate10 onto the final substrate 14 side.

As a result, as shown in FIG. 16E, the transferred body 12 a, which is athin film integrated circuit, is provided on the required part of thefinal substrate 14.

According to the present fourth embodiment, effects equivalent to thoseof the various other embodiments described above are attained; inaddition, because the transferred bodies have been formed such thatthere will be no adverse effects on the devices or circuits that make upthe transferred bodies even when breakage occurs in the vicinity of theboundaries of the transfer-targeted region, a step of separating thetransferred bodies by etching or the like can be omitted.

Fifth Embodiment

FIGS. 17A to 17E are drawings for explaining a fifth embodiment(transfer method) of the present invention. In each of the first tothird embodiments described earlier, separation was carried out on thetransferred bodies 12 a and, wholly or partially, on the peeling layer11, but in the present fifth embodiment, an example is shown in whichseparation is carried out on only the peeling layer.

The various steps can be carried out roughly as in the first and thirdembodiments described above with regard to the methods of operation,components and materials used, formation conditions and so on, and hencewhere the descriptions overlap the same reference numeral will be usedand the redundant description will be omitted.

As shown in FIG. 17A, after the peeling layer 11 has been formed on thefirst substrate 10, breaks 11 a are formed in advance in a grid shape orthe like by photoetching or the like, thus forming a constitutionaccording to which the transferred body 12 a of a transfer-targetedregion can be broken cleanly away from the outer periphery of thetransfer-targeted region. The transferred bodies 12 a are formed on topof the peeling layer 11 in which such breaks 11 a have been formed.

Here, because there are no breaks such as grooves in the transferredlayer 12 itself, it is possible that breaking along thetransfer-targeted region may not occur cleanly during peeling, andhence, as in the fourth embodiment described above, it is preferable,for example, to provide a forbidden region in which devices, circuitryand wiring are not provided in the vicinity of the boundaries of thetransfer-targeted region.

Next, as shown in FIG. 17B, an adhesive layer is provided in the regioncorresponding to the transferred body 12 a to be selectively transferredout of the transferred layer 12. An adhesive layer as used in the firstor second embodiments may be used, but here it has been decided toprovide an adhesive sheet 56 as used in the third embodiment.

Next, as shown in FIG. 17C, after alignment has been carried out, thefirst substrate 10 and the final substrate 14 are pushed together, thusbonding the final substrate 14 to the adhesive sheet 56. The firstsubstrate 10 and the final substrate 14 are thus bonded (joined)together at a certain place.

Next, an excimer laser or the like is irradiated onto the correspondingregion of the peeling layer 11 under the transfer-targeted region fromthe rear side of the first substrate 10, thus bringing about partialpeeling, i.e. peeling in this region, of the peeling layer 11.

Next, as shown in FIG. 17D, the final substrate 14 is pulled away fromthe first substrate 10, whereupon, because the transfer-targeted regioncan be separated away cleanly in the peeling layer 11 due to the breaks11 a, the transferred body 12 a formed on the peeling layer 11 alsobreaks away in line with the outer peripheral shape of thetransfer-targeted region, and hence the transferred body 12 a that isbonded to the final substrate 14 through the adhesive sheet 56 istransferred from the first substrate 10 onto the final substrate 14side.

As a result, as shown in FIG. 17E, the transferred body 12 a, which is athin film integrated circuit, is provided on the required part of thefinal substrate 14.

According to the present fifth embodiment, effects similar to those ofthe various other embodiments described above are attained; in addition,because breaks (grooves) are formed in the peeling layer only, thetransferred layer can be made to break in the vicinity of the boundariesof the transfer-targeted region along these breaks. Moreover, becausethe transferred bodies have been formed such that there will be noadverse effects on the devices or circuits that make up the transferredbodies, a step of separating the transferred bodies by etching or thelike can be omitted.

Sixth Embodiment

FIGS. 18A and 18B are drawings for explaining a sixth embodiment(transfer method) of the present invention. In the fifth embodimentdescribed above, separation of the peeling layer was carried out in thevicinity of the boundaries of a transfer-targeted region, whereas in thepresent sixth embodiment, an example is shown in which separation of thetransferred bodies is made easy by providing a projecting structure onthe first substrate.

The various steps can be carried out roughly as in the first embodimentdescribed earlier with regard to the methods of operation, componentsand materials used, formation conditions and so on, and hence where thedescriptions overlap the same reference numeral will be used and theredundant description will be omitted.

In the present embodiment, as shown in FIG. 18A, in the first stepdescribed earlier, projections 10 a are formed on the surface of thefirst substrate 10 in advance along the outer peripheries of atransfer-targeted region. In this way, the projecting structure isformed. Then, in the second step described earlier, after the peelinglayer 111 has been formed on the first substrate 10, the surface is madeflat once again by etch-back or the like, before the transferred layer12 is formed.

Alternatively, after the peeling layer 11 has been formed on the firstsubstrate 10, it is also possible to form the transferred layer 12without carrying out flattening treatment such as etch-back, as shown inFIG. 18B. In this case, the projecting structure formed through theprojections 10 a on the first substrate 10, i.e. the lower layer, appearas is on the upper layer, and hence a projecting structure 12 b appearsalong the periphery of the transfer-targeted region on the transferredlayer 12.

Note that it is also possible to make undulations provided on the firstsubstrate 10 into a recessed structure. This is because, so long asthere are undulations, the peeling layer and the transferred layerthereupon will readily break along the boundaries provided by theundulations.

According to the present sixth embodiment, effects equivalent to thoseof the various other embodiments described above are attained; inaddition, the peeling layer is separated through the projectingstructure provided on the substrate, and hence it becomes that thetransferred bodies are readily separated, and moreover it becomespossible to use the projecting structure a appearing on the surface ofthe transferred layer 12 as banks 12 b for filling of adhesive (seeFIGS. 12A and B), which is suitable in the case that coating with theadhesive is carried out using an ink jet method or the like.

Seventh Embodiment

FIGS. 19A to 19E are drawings for explaining a seventh embodiment(transfer method) of the present invention. Unlike the various otherembodiments described above, the present seventh embodiment relates tothe second invention in which transfer is carried out twice.

The various steps can be carried out roughly as in the first embodimentdescribed earlier with regard to the methods of operation, componentsand materials used, formation conditions and so on, and hence where thedescriptions overlap the same reference numeral will be used and theredundant description will be omitted.

The first and second steps are carried out as in the first embodimentdescribed earlier (see FIG. 4A to FIG. 6).

<Third Step>

In the present seventh embodiment, transfer is carried out a pluralityof times, and hence, first all of the transferred bodies are transferredonto a second substrate 14, i.e. an intermediate transfer substrate, andthen partial transfer is carried out onto a final substrate 24, i.e. atransfer destination substrate.

First, as shown in FIG. 19A, a multi-layer film 13 in which a protectivelayer 15 a, a light-absorbing layer 15 b and an adhesive layer 15 c arebuilt up in this order is formed on the second substrate 14, i.e. theintermediate transfer substrate.

Next, as shown in FIG. 19B, a first substrate 10 as described earlier isplaced onto the adhesive layer 15 c of the second substrate 14, thusjoining all of the large number of transferred bodies 12 a formed on thefirst substrate 10 onto the peeling layer 11 via the adhesive layer 15c.

There are no particular limitations oh the second substrate 14, but anexample is a substrate (sheet), in particular a transparent substrate.This substrate may either be a flat sheet or a curved sheet. Regardingthe material of the second substrate 14, the same kind of material canbe used as with the final substrate 14 in the first embodiment describedearlier.

Regarding the materials constituting the multi-layer film 13, theprotective layer 15 a is for protecting the second substrate from heatgenerated in the light-absorbing layer 15 b when the multi-layer film isirradiated with light, and examples of the material of the protectivelayer 15 a include inorganic films of SiO_(x), Si₃N₄ and so on, andsynthetic resin materials.

Moreover, the material of the light-absorbing layer 15 b can be selectedfrom materials capable of converting the irradiated light into heat;examples include silicones, metals, carbon black, and photopolymerizablemonomers and oligomers.

Suitable examples of the adhesive constituting the adhesive layer 15 cinclude various curable adhesives, for example reactive curingadhesives, thermosetting adhesives, photo-curing adhesives such asUV-curing adhesives, and anaerobic curing adhesives. The adhesive mayhave any constitution, for example epoxy type, acrylate type, siliconetype and so on.

<Fourth Step>

Next, the first transfer, i.e. the transfer from the transfer originsubstrate onto the intermediate transfer substrate is carried out.Specifically, as shown in FIG. 19B, light L is irradiated onto the wholeof the peeling layer 11 from the first substrate 10 side of the joinedbody comprising the first substrate 10 and the second substrate 14, thusbringing about in-layer peeling and/or interfacial peeling of thepeeling layer. Through the peeling of the peeling layer 11, all of thetransferred bodies 12 a break away from the peeling layer 11, and hencethe state becomes such that the transferred bodies 12 a are joined onlyto the second substrate 14 side.

The principle by which the peeling occurs in the peeling layer, and thedetails of the irradiated light are as in the first embodiment describedearlier.

<Fifth Step>

Next, the first substrate 10 which has been peeled off from thetransferred bodies 12 a is removed, and then an adhesive sheet 25containing a heat-fusing adhesive is provided on the transferred bodies12 a, thus forming a transferred-body-supplying substrate 23.

Regarding the adhesive sheet 25, the adhesive sheet 56 used in the thirdembodiment described earlier can be used as is. There are no particularlimitations on the method of providing the adhesive sheet 25 on thetransferred bodies 12 a; for example, the adhesive sheet 25 can easilybe provided by using a method such as placing on the transferred bodies12 a an adhesive sheet that has been cut in line with the secondsubstrate 14, and then pressing while heating. Note that it is alsopossible to not bond the adhesive sheet 25 onto the transferred bodies12 a at this time, but rather insert the adhesive sheet 25 when thefinal substrate 24 is placed on the transferred bodies 12 a as describedbelow. Furthermore, as described in the third embodiment earlier, theconstitution may be made to be such that the adhesive sheet is suppliedusing a tape carrier F. (see FIG. 15).

There are cases that peeling residue from the peeling layer 11 remainsattached to the transferred bodies 12 a after transfer onto the secondsubstrate 14 side, and it is preferable to completely remove thispeeling residue. The method used for removing the residual parts of thepeeling layer 11 can be selected as appropriate from methods such aswashing, etching, ashing, polishing and so on, or a combination thereof.

Furthermore, in the case that peeling residue from the peeling layer 11remains attached to the surface of the first substrate 10 after thetransfer of the transferred bodies 12 a has been completed, this can beremoved as described above for the transferred bodies 12 a. The firstsubstrate 10 can thus be reused (recycled). By reusing the firstsubstrate 10 in this way, wastefulness can be avoided with regard to themanufacturing cost. This is particularly significant in the case that afirst substrate 10 made from an expensive material such as quartz glassor a scarce material is used:

<Sixth Step>

Next, as shown in FIG. 19D, the final substrate 24 onto which some ofthe transferred bodies 12 a are to be transferred is placed on theadhesive sheet 25 of the transferred-body-supplying substrate 23, andlight L is selectively irradiated onto only the regions of thetransferred bodies 12 a to be transferred, thus joining onto the finalsubstrate 24 only the transferred bodies 12 a to be transferred.

Here, the light L used may be any that is received by thelight-absorbing layer 15 b of the multi-layer film 13, generating heat,and thus bring about fusion through the adhesive sheet 25; examplesinclude X-rays, UV rays, visible light, infrared rays (heat rays), laserlight, millimeter waves, microwaves, electron rays, and radiation(α-rays, β-rays, γ-rays). Of these, from the standpoint of peeling(ablation) of the peeling layer 11 occurring readily and localirradiation with high precision being possible, laser light ispreferable. As the laser light, the same kind of laser light as thatused in the fourth step described above can be used, or a different typeof laser light can be used.

By using a transferred-body-supplying substrate as described above, thenby placing the final substrate 24 onto which some of the transferredbodies 12 a are to be transferred on top of thetransferred-body-supplying substrate 23 so as to be in contact with theadhesive sheet 25, and irradiating the light L onto only the regions ofthe transferred bodies 12 a to be transferred, the heat generated in thelight-absorbing layer 15 b where irradiated with the light istransmitted to the adhesive sheet 25, and hence only the transferredbodies 12 a to be transferred are bonded to the final substrate 24 via aheat-fused adhesive layer (the adhesive sheet 25, which first melts andthen hardens). By placing the final substrate 24 on top of thetransferred-body-supplying substrate 23 and irradiating light onto onlythe parts where transfer is to be carried out, it is thus possible toaccurately transfer into prescribed positions on the final substrate 24some or all of the large number of transferred bodies 12 a on thetransferred-body-supplying substrate 23 side.

Note that the final substrate 24 can be thought of as being like thesecond substrate 14 in the first embodiment described earlier, and hencedescription of the final substrate 24 will be omitted here.

<Seventh Step>

Next, as shown in FIG. 19E, forces are applied to thetransferred-body-supplying substrate 23 and the final substrate 24 in adirection so as to separate the two, thus removing thetransferred-body-supplying substrate 23 from the final substrate 24. Bypulling the transferred-body-supplying substrate 23 away from the finalsubstrate 24, transferred bodies 12 a are transferred into a pluralityof positions on the final substrate 24, as shown in FIG. 19E.

Moreover, the transferred bodies 12 a that are not transferred remain onthe transferred-body-supplying substrate 23. Regarding thetransferred-body-supplying substrate 23 on which these transferredbodies 12 a remain, as with the first substrate 10, it is possible toapply the third invention to the present embodiment, i.e. repeat thefifth to seventh steps described above, and thus use thetransferred-body-supplying substrate 23 for transferring a large numberof transferred bodies 12 a onto separate final substrates 24 one afteranother.

Specifically, in FIG. 3, ‘transfer origin substrate’ is changed to‘transferred-body-supplying substrate’. Then, S1 in FIG. 3 correspondsto the first to fourth steps described above, S2 and S3 in FIG. 3correspond to the fifth step described above, S4 in FIG. 3 correspondsto the sixth step described above, and S5 in FIG. 3 corresponds to theseventh step described above. Each time transferred bodies 12 a aretransferred, a final substrate 24 is fed in as a transfer destinationsubstrate, and is aligned with and bonded to thetransferred-body-supplying substrate 23 (S3), irradiation of light iscarried out selectively (S4), and then the transferred bodies 12 a to betransferred are peeled off along with the final substrate 24 (S5), i.e.the sequence of steps S2 to S6 is repeated as long as transferred bodies12 a still remain on the transferred-body-supplying substrate 23 (theintermediate transfer substrate). In the case of applying the thirdinvention and transferring to a plurality of final substrates 24 oneafter another in this way, and thus applying the present manufacturingmethod to, for example, the manufacture of an active matrix board for anelectro-optical apparatus, it is possible to efficiently dispose inscattered locations minute transferred bodies 12 a such as TFTs for eachof a large number of pixels on a substrate.

Through the steps described above, a large number of transferred bodies12 a to be transferred can be selectively transferred onto a finalsubstrate 24. Afterwards, the transferred bodies 12 a that have beentransferred can be connected to wiring on the final substrate 24 throughwiring formed using any of various methods as will be described later,for example an ink jet coating method, photolithography, or a coatingmethod combined with liquid repellency treatment using an SAM(self-assembled monolayer) film, a protective film can be formed ifdesired, and so on.

Note that in the present embodiment, the constitution has been made tobe such that an adhesive sheet is used as the outermost layer of thetransferred-body-supplying substrate 23, heat fusion is brought aboutthrough heat generated by irradiation with light, and hence transferredbodies 12 a are transferred onto the final substrate 24; however, it isalso possible to use a curing adhesive or photo-curing resin as in thefirst or second embodiment described earlier instead of the adhesivesheet, and thus transfer only the transferred bodies 12 a to betransferred onto the final substrate 24. In this case, it is notnecessary to provide the light-absorbing layer 15 b and the protectivelayer 15 a.

According to the present seventh embodiment, effects similar to those ofthe first embodiment described earlier are attained; in addition,transfer onto the final substrate 24 can be carried out with thetop/bottom relationship of the layered structure of the transferredbodies 12 a formed on the first substrate 10 maintained, and hence thedevices can be manufactured using an existing device manufacturingprocess, i.e. it is not necessary to carry out extra improvements suchas changing the position of external connection terminals which isnecessary to cope in the case that the top/bottom relationship isreversed.

Eighth Embodiment

FIGS. 20A to 20D are drawings for explaining an eighth embodiment(transfer method) of the present invention. As with the seventhembodiment described above, the present eighth embodiment relates to thesecond invention in which transfer is carried out a plurality of times,but here transfer is carried out a total of three times.

The various steps can be carried out roughly as in the first and seventhembodiments described earlier with regard to the methods of operation,components and materials used, formation conditions and so on, and hencewhere the descriptions overlap the same reference numeral will be usedand the redundant description will be omitted.

The transfer method of the present embodiment is carried out through thefollowing steps (a) to (i).

<Step (a)>

In step (a), a peeling layer 11 is formed on the first substrate 10.This step can be carried out as with the first step in the firstembodiment described earlier with regard to preferable materials for thefirst substrate 10, preferable materials for the peeling layer 11, themethod of forming the peeling layer 11, and so on (see FIG. 4A).

<Step (b)>

Next, a large number of transferred bodies 12 a are formed on thepeeling layer 11. This step (b) can be carried out as with the secondstep in the first embodiment described earlier (see FIG. 4B).

<Step (c)>

Next, the transferred bodies 12 a on the first substrate 10, i.e. thetransfer origin substrate, and a second substrate 26, i.e. anintermediate transfer substrate, are joined together via a temporaryadhesive layer 26 a comprising a solvent-dissolvable adhesive.

The solvent-dissolvable adhesive that constitutes the temporary adhesivelayer 26 a can be selected as appropriate from adhesives that dissolverelatively easily in some solvent such as water, alcohol, acetone, ethylacetate or toluene, thus enabling the bonded article to be peeled off;examples include water-soluble adhesives such as polyvinyl alcohol typeadhesives, water-based vinyl urethane type adhesives, acrylic typeadhesives, polyvinyl pyrrolidone, alpha olefins, maleate type adhesivesand photo-curing adhesives, and various adhesives that are soluble inorganic solvents such as acrylic type adhesives, epoxy type adhesivesand silicone type adhesives.

The temporary adhesive layer 26 a may be applied onto the whole surfaceof the second substrate 26, or may be applied onto only the transferredbodies 12 a, or may be applied onto both. The thickness of the temporaryadhesive layer 26 a should be such that the transferred bodies 12 a canbe bonded to the second substrate 26 reliably, and can be selected asappropriate in accordance with the adhesive strength of the adhesiveused and so on. Regarding the method of forming the temporary adhesivelayer 26 a, methods such as a spin coating method, an ink jet coatingmethod using an ink jet type thin film formation apparatus as describedabove, and printing methods can be used.

There are no particular limitations on the material or thickness of thefinal substrate 26; for example, a substrate of a material and thicknesslike those of the second substrate 14 used in the first embodimentdescribed earlier can be used.

<Step (d)>

Next, as shown in FIG. 20A, light, preferably laser light, is irradiatedfrom the first substrate 10 side onto the temporarily joined bodycomprising the second substrate 26, the temporary adhesive layer 26 a,the transferred bodies 12 a, the peeling layer 11 and the firstsubstrate 10 laminated together, thus bringing about in-layer peelingand/or interfacial peeling of the peeling layer 11, and hencetransferring all of the transferred bodies 12 a onto the secondsubstrate side.

The light irradiation for the peeling of the peeling layer 11 can becarried out using the same light, especially laser light, andirradiation conditions as used in the fourth step in the firstembodiment described earlier.

After the peeling, as shown in FIG. 20B, the first substrate 10 isremoved from the transferred bodies 12 a. There are cases that peelingresidue from the peeling layer 11 remains attached to the transferredbodies 12 a after transfer onto the second substrate 26 side, and it ispreferable to completely remove this peeling residue. The method usedfor removing the residual parts of the peeling layer 11 can be selectedas appropriate from methods such as washing, etching, ashing, polishingand so on, or a combination thereof. Furthermore, any peeling residuefrom the peeling layer 11 remaining attached to the surface of the firstsubstrate 10 after the transfer of the transferred bodies 12 a has beencompleted can be removed by a similar method, and as a result the firstsubstrate 10 can be reused (recycled). By reusing the first substrate 10in this way, wastefulness can be avoided with regard to themanufacturing cost. This is particularly significant in the case that afirst substrate 10 made from an expensive material such as quartz glassor a scarce material is used.

<Step (e)>

Next, as shown in FIG. 20C, a third substrate 27, which is anintermediate transfer substrate, on which a multi-layer film 28comprising a protective layer 28 a, a light-absorbing layer 28 b and anadhesive layer 28 c built up in this order has been formed in advance,and the second substrate 26 onto which all of the transferred bodies 12a have been transferred, are placed on top of one another, and all ofthe transferred bodies 12 a are joined to the third substrate 27 via theadhesive layer 28 c.

The constitution of the multi-layer film 28 can be the same as that ofthe multi-layer film 13 used in the first embodiment described earlier.There are no particular limitations on the material or thickness of thethird substrate 27; for example, a substrate of a material and thicknesslike those of the second substrate 14 used in the first embodimentdescribed earlier can be used.

<Step (f)>

Next, the temporary adhesive layer 26 a is dissolved away using asolvent in which the temporary adhesive layer 26 a is soluble, thusremoving the second substrate 26 from the transferred bodies 12 a.

The dissolving of the temporary adhesive layer 26 a can be carried outusing a method such as immersing part (the second substrate side) or allof the temporarily joined body shown in FIG. 20C in a suitable solventsuch as water or an organic solvent, or spraying on such a solvent.After the second substrate 26 has been removed, it is preferable tocompletely evaporate off remaining solvent by hot air drying or thelike.

<Step (g)>

Next, as shown in FIG. 20D, after the second substrate 26 has beenremoved, an adhesive sheet 29 a containing a heat-fusing adhesive ismounted on the transferred bodies 12 a, thus forming atransferred-body-supplying substrate 29 having a structure in which themulti-layer film 28, the transferred bodies 12 a and the adhesive sheet29 a are built up in this order on the third substrate 27.

The adhesive sheet 29 a used can be like the adhesive sheet 56 used inthe third embodiment described earlier. Moreover, regarding the methodof disposing the adhesive sheet 29 a, again this can be carried out aswith the adhesive sheet 56 used in the third embodiment describedearlier.

By carrying out the steps (h) and (i) described below, thetransferred-body-supplying substrate 29 can be used for selectivelytransferring some of the transferred bodies 12 a onto a final substrateas with the transferred-body-supplying substrate 23 used in the seventhembodiment described above, but here the top/bottom relationship of thelayered structure of the transferred bodies 12 a transferred onto thefinal substrate will be the opposite to that with thetransferred-body-supplying substrate 23 used in the seventh embodimentdescribed above.

<Step (h)>

Next, a final substrate (transfer destination substrate), not shown, isplaced onto the adhesive sheet 29 a side of thetransferred-body-supplying substrate 29, and irradiation with light iscarried out as in the sixth step in the seventh embodiment describedabove, thus transferring onto the final substrate only the transferredbodies 12 a to be transferred (see FIGS. 19D and 19E).

The final substrate, light irradiation conditions and so on used can bemade to be as in the sixth step in the seventh embodiment describedabove.

<Step (i)>

Next, the final substrate and the transferred-body-supplying substrate29 are pulled apart, thus obtaining a final substrate having transferredbodies 12 a transferred in desired positions thereon. (see FIG. 19E).

Ninth Embodiment

FIG. 21 is a drawing showing a ninth embodiment (circuit board) of thepresent invention.

The present embodiment is characterized in that devices 60 such as TFTsare transferred onto a final substrate such as an active matrix boardusing the transfer method described in one of the embodiments above, andthen the devices 60 are electrically connected by wiring 63 and 64 madeof a conductor to wiring 61 and 62 that has formed on the finalsubstrate in advance, thus manufacturing a circuit board.

In the present embodiment, a substrate having a circuit pattern andwiring made of a conductor formed thereon is used as the finalsubstrate, for example any of various substrates for electro-opticalapparatuses such an active matrix board, or any of various substratesfor general electronic apparatuses such as a printed wiring board or aflexible printed wiring board. Moreover, regarding the devices 60, inaddition to TFTs, any of various circuit units such as shift registers,DA converters, SRAMs, DRAMs, current compensation circuits, ICs and LSIscan be used.

The wiring 63 and 64, which is made from a conductor and is formed afterthe devices 60 have been transferred to electrically connect the devices60 to the wiring 61 and 62 that has been formed on the final substratein advance can be formed using a method such as the following: bondingon of metal wire such as gold wire; a coating technique for a conductivematerial such as a thin metal film or a thin ITO film, in which a thinfilm formation method such as sputtering, vacuum deposition, CVD orelectroless plating is combined with a resist film or a mask; a printingmethod in which a conductive coating liquid is applied in prescribedpositions on the substrate, and then the substrate is subjected to heattreatment, thus forming metallic conductors; or an ink jet coatingmethod using such a conductive coating liquid. The method in which aconductive coating liquid is applied in prescribed positions on thesubstrate by ink jet coating, and then the substrate is subjected toheat treatment, thus forming circuitry comprising metallic conductors isparticularly preferable.

The application of the conductive coating liquid onto the finalsubstrate using the ink jet coating method can easily be carried outusing the ink jet type thin film formation apparatus 30 described in thefirst embodiment earlier (see FIG. 10). Specifically, the ink jet typethin film formation apparatus 30 can not only be used for formingvarious types of adhesive layer, but can also be used for forming wiringas in the present embodiment. In the case of forming wiring, a coatingliquid for conductor formation is used instead of the liquid adhesive L.The coating liquid L for conductor formation should be a liquid that canbe discharged from the nozzles of the ink jet head, and should be suchthat circuit conductors having electrical conductivity sufficient toallow use as electrical wiring can be obtained by drying and baking thecoating film formed on the substrate. Preferably, a fine metal powderdispersion in which fine metal particles of gold, silver or the like aredispersed uniformly and stably in an organic solvent is used.Commercially sold coating liquids suitable for the present inventioninclude Perfect Gold (proprietary name) and Perfect Silver (proprietaryname) made by Vacuum Metallurgical Co., Ltd., but there is no limitationto these.

Using the thin film formation apparatus 30, the coating liquid L forconductor formation containing fine metal particles is applied onto thefinal substrate to form thin-film lines, and then the substrate isdried, and then baked at a temperature above the temperature at whichthe fine metallic particles contained in the coating liquid are sinteredonto the substrate, whereupon the fine metallic particles join togetheron the substrate, thus forming the wiring 63 and 64 made of a conductorhaving sufficient electrical conductivity. The drying temperature ismade to be a temperature such that the solvent used to disperse the finemetallic particles in the coating liquid L can be completely evaporatedoff, generally about 50 to 150° C., preferably about 90 to 120° C.;moreover, the drying time is made to be about 1 to 60 min, preferablyabout 2 to 5 min. Furthermore, the baking temperature is changed asappropriate in accordance with the fine metallic particles contained inthe coating liquid L; in the case of using a coating liquid containingultra-fine particles of mean particle diameter 0.1 μm or less as thefine metallic particles, the baking can be carried out at a bakingtemperature considerably lower than the melting point of the metalitself. For example, in the case of a coating liquid L containingultra-fine gold or silver particles (mean particle diameterapproximately 0.01 μm), the baking can be carried out at a lowtemperature of about 200 to 400° C., preferably about 250 to 300° C. Thewiring 63 and 64 for electrically connecting the devices 60 to thewiring 61 and 62 on the final substrate is formed through the baking.

Tenth Embodiment

FIG. 22 is a drawing showing a tenth embodiment (circuit board) of thepresent invention.

The present embodiment is characterized in that a plurality of devices60 that have been transferred with gaps therebetween onto any of variousfinal substrates using the transfer method described in one of theembodiments above are electrically connected together by wiring 65 madeof a conductor, thus manufacturing a circuit board. The plurality ofdevices 60 may be unit circuits having the same function and size as oneanother, or alternatively various devices having different functions andsizes to one another can be combined.

As with the wiring 63 and 64 in the ninth embodiment described above,the wiring 65 can be formed using any of various thin film formationmeans, or a printing method or ink jet coating method using a conductivecoating liquid. In this way, a circuit board is manufactured bytransferring a plurality of devices 60 onto a final substrate, and thencarrying out electrical connection through wiring 65 made of aconductor, and hence the circuit board manufacture becomes easy.Furthermore, there is no need to form wiring on the substrate inadvance, and hence the devices can be transferred onto the surfaces ofvarious articles that, unlike electronic displays and electricalcircuits, do not have wiring, and thus novel apparatuses that have notexisted hitherto can be constituted.

Eleventh Embodiment

FIGS. 23 and 24 are drawings showing an eleventh embodiment (circuitboard) of the present invention.

The present embodiment is characterized in that second and third devices60 are placed in staggered fashion on top of a first device 60 that hasbeen transferred onto any of various final substrates using the transfermethod described in one of the embodiments above, and the respectivedevices are then electrically connected together by wiring 66 made of aconductor, thus manufacturing a circuit board. The plurality of devices60 may be unit circuits having the same function and size as oneanother, or alternatively various devices having different functions andsizes to one another can be combined.

As with the wiring 63 and 64 in the ninth embodiment described earlier,the wiring 66 can be formed using any of various thin film formationmeans, or a printing method or ink jet coating method using a conductivecoating liquid. In this way, by placing a plurality of devices 60 on topof one another in staggered fashion on a final substrate, and thenelectrically connecting the respective devices 60 together, the packingdensity of the devices 60 can be raised. Moreover, it becomes possibleto build three-dimensional semiconductor devices having variousfunctions.

Twelfth Embodiment

FIG. 25 is a drawing showing a twelfth embodiment (circuit board) of thepresent invention.

The present embodiment is characterized in that, on top of a firstdevice 60 that has been transferred onto any of various final substratesusing the transfer method described in one of the embodiments above, ismounted a device 67 that is smaller than the device 60, and then thedevices 60 and 67 are electrically connected together by wiring 66 madeof a conductor, thus manufacturing a circuit board. There are noparticular limitations on the combination of devices 60 and 67, but, forexample, composite circuits such as LSI+IC or LSI+TFT can easily beconstructed.

As with the wiring 63 and 64 in the ninth embodiment described earlier,the wiring 66 can be formed using any of various thin film formationmeans, or a printing method or ink jet coating method using a conductivecoating liquid. In this way, by constructing a composite circuit inwhich are combined devices 60 and 67 having different functions to oneanother, devices that are manufactured under different processconditions to one another can be combined, and hence devices having alayered structure for which manufacture has been difficult hitherto canbe provided, and moreover devices having a three-dimensional structurecan be manufactured easily.

Thirteenth Embodiment

FIGS. 26 and 27 are drawings for explaining a thirteenth embodiment(circuit board, electro-optical apparatus) of the present invention; thepresent embodiment illustrates a case of applying the present inventionto an active matrix type liquid crystal electro-optical apparatus as theelectro-optical apparatus.

FIG. 26 is a figure showing schematically the constitution of a liquidcrystal electro-optical apparatus using a circuit board (active matrixboard) according to the present invention; the liquid crystalelectro-optical apparatus 70 has as principal constituent elementsthereof the active matrix board 80, a color filter 73, and a liquidcrystal material, which is provided in a space 74 between the activematrix board 80 and the color filter 73. Regarding the active matrixboard 80, a polarizing plate 75 is provided on the outside of a glasssubstrate, driving circuitry 80A is provided on the inside of the glasssubstrate, and an oriented film (not shown) is provided on the drivingcircuitry 80A. The color filter 73 has a structure in which a polarizingplate 71 is provided on the outside of a glass substrate 72, and a blackmatrix, an RGB color filter layer, an overcoat layer, transparentelectrodes, and an oriented film are built up in this order on theinside of the glass substrate 72, although the details are not shown inthe drawing. A backlight 76 is provided on the outside of the lowerpolarizing plate 75.

Regarding the constitution of the active matrix board 80, as shown inFIGS. 26 and 27, the driving circuitry 80A formed on the glass substrateincludes pixel electrodes 82 each formed in a region corresponding toone of a plurality of pixels 86, data lines 83 and gate lines 84 whichrun lengthwise and crosswise, devices 81, which are transferred usingthe transfer method described earlier in either the first or secondembodiment, and wiring 85, which electrically connects the devices 81 tothe data lines 83 and the gate lines 84. The pixel electrodes 82 areformed from a transparent electrode material made of ITO. Regarding thedevices 81, one or more types of circuit unit such as shift registers,DA converters, SRAMs, DRAMs, current compensation circuits and so on canbe used.

With the active matrix board according to the present invention, a largenumber of devices that are to be disposed in scattered locations withspaces therebetween on a final substrate can be manufacturedconcentrated together on a first substrate, and the devices can then betransferred accurately into prescribed positions on the final substrate;consequently, compared with an active matrix board that is manufacturedby forming the devices on the substrate directly, the area efficiency inthe manufacture of the devices can be greatly improved, and a largeactive matrix board in particular can be provided cheaply.

Moreover, because manufacture is carried out by manufacturing a largenumber of devices concentrated together on a first substrate and thentransferring the devices onto a final substrate, it is possible to mounton high-performance devices, and hence the performance of the activematrix board can be improved. Furthermore, it becomes easy to carry outselection and elimination before the transfer of the devices, and hencethe product yield can be improved.

Moreover, because the electro-optical apparatus according to the presentembodiment is manufactured using a circuit board according to thepresent invention as described above, the cost can be reduced and theproduct quality can be improved compared with an electro-opticalapparatus manufactured using a conventional active matrix board. Notethat, in the present embodiment, a liquid crystal electro-opticalapparatus was given as an example of the electro-optical apparatus, butapplication to other electro-optical apparatuses such as organicelectroluminescence apparatuses and electrophoretic displays is ofcourse also possible. Moreover, according to the present invention, dueto accurately disposing the minute devices in prescribed positions onthe final substrate, the ability to follow curvature of the substrate isimproved, and by using a flexible substrate, an active matrix board thatis flexible, light, and strong against impact when dropped can beprovided. Furthermore, an active matrix board having a curved surfacesuch as that of a curved display can be provided.

Fourteenth Embodiment

FIGS. 28 and 29 are drawings for explaining a fourteenth embodiment(circuit board, electro-optical apparatus) of the present invention. Inthe thirteenth embodiment described above, the driving circuitry 80A wasformed by providing a device 81 for each of the RGB pixels 86, but, asshown in FIGS. 28 and 29, by using devices 81 capable of controlling thedriving of an RGB unit (FIG. 28) or a plurality of RGB units (FIG. 29)as the devices 81, it is possible to constitute driving circuitry 80B or80C for which the proportion of the display surface area taken up by thedevices 81 is reduced, and hence the display performance of the displaycan be improved.

Fifteenth Embodiment

FIGS. 30 and 31 are drawings for explaining a fifteenth embodiment(electro-optical apparatus (organic electroluminescence apparatus)) ofthe present invention.

In the present embodiment, an organic electroluminescence apparatus ismanufactured by forming EL (electroluminescence) pixels on a finalsubstrate 90, then transferring devices 94 onto the rear surfaces of thepixel parts using the transfer method described earlier in either thefirst or second embodiment, and then electrically connecting the ELpixels to the devices 94 by wiring 95.

In the present embodiment, the EL pixels are constituted by forming atransparent electrode 91 made of ITO on the final substrate, whichcomprises a glass substrate, and forming banks that partition the pixelsfrom one another, and then forming luminescent layers 92 comprising adesired luminescent material between the banks, and further formingreflecting electrodes comprising a metal such as aluminum on theluminescent layers 92. The luminescent layers 92 are organic EL devicesthat use an organic fluorescent material. The luminescent layers 92 maybe made to have a single layer structure comprising the organic ELmaterial, or may be made to have a multilayer structure in which theluminescent layer is sandwiched between an electron transporting layerand a hole transporting layer.

Organic EL devices can be driven at a lower voltage than inorganic ELdevices, and are characterized in that a high brightness can beobtained, and moreover luminescence of a large variety of colors can beobtained. Examples of organic fluorescent materials that can be used inthe luminescent layers 92 include cyanopolyphenylenevinylene,polyphenylenevinylene, polyalkylphenylenes,2,3,6,7-tetrahydro-11-oxo-1H,5H,11H(1)benzopyrano[6,7,8-ij]-quinolizine-10-carboxylicacid, 1,1-bis-(4-N,N-ditolylaminophenyl)cyclohexane,2-(3′,4′-dihydroxyphenyl)-3,5,7-trihydroxy-1-benzopyrylium perchlorate,tris(8-hydroxyquinolinol)aluminum,2,3,6,7-tetrahydro-9-methyl-11-oxo-1H,5H,11H(1)benzopyrano[6,7,8-ij]-quinolizine,an aromatic diamine derivative (TDP), an oxydiazole dimer (OXD), anoxydiazole derivative (PBD), a distyryl arylene derivative (DSA),quinolinol metal complexes, a beryllium benzoquinolinol complex (Bebq),a triphenylamine derivative (MTDATA), distyryl derivatives, a pyrazolinedimer, rubrene, quinacridone, triazole derivatives, polyphenylene,polyalkylfluorenes, polyalkylthiophenes, an azomethine zinc complex, aporphyrin zinc complex, a benzoxazole zinc complex, and a phenanthrolineeuropium complex.

Conventionally, to manufacture such an organic electroluminescenceapparatus, driving circuitry comprising devices has been formed on aglass substrate, and then the EL pixels have been formed in positionsnot overlapping the devices. However, with this constitution, there is aproblem in that the devices are an obstruction, and hence the EL pixelparts become small in area. To resolve this problem, a structure hasbeen proposed in which reflecting electrodes are replaced withtransparent electrodes, the reflecting electrodes, luminescent layersand transparent electrodes are formed in this order on the substrate,and light is emitted from the transparent electrode side. However, atransparent electrode material such as ITO must be deposited usingsputtering, which requires heat treatment at a high temperature, andhence there is a problem that the organic fluorescent material in theluminescent layers is degraded through the heat treatment during theformation of the transparent electrodes on the luminescent layers.According to the present invention, after forming the EL pixel parts onthe glass substrate, the devices can be transferred onto the reflectingelectrodes easily and in precise positions, and moreover the devices andthe EL pixels can easily be connected together using an ink jet coatingmethod or the like as described in earlier embodiments; it is thuspossible to provide the devices on the rear side of the EL pixels so asnot to obstruct the luminescent surfaces of the EL pixels, withoutbringing about degradation of the EL pixel parts, in particular theluminescent layers. The EL pixel parts can thus be made larger in areawithout the devices obstructing the EL pixels, and hence the displayperformance is improved.

Sixteenth Embodiment

In the present embodiment, a description is given of a case in which thetransfer method of the present invention is used in the manufacture of amemory such as a FeRAM (ferroelectric RAM). The memory according to thepresent invention is manufactured using a technique like that of thefifteenth embodiment described above, by forming memory parts containingferroelectric layers of PZT, SBT or the like on a final substrate, thentransferring devices containing writing/reading circuitry or the likeonto the rear side using the transfer method of one of the embodimentsdescribed earlier, and then electrically connecting the memory parts andthe devices together by wiring.

A FeRAM has ferroelectric films of PZT, SBT or the like which require ahigh temperature for deposition, and the deposition must be carried outusing sputtering, which requires a high heat treatment temperature; ithas thus been the case that, if one attempts to deposit ferroelectricfilms of PZT, SBT or the like after devices such as TFTs have beenformed on the substrate, then there will be a risk of the devices beingdegraded by the heat. Conventionally, it has thus been difficult tomanufacture a FeRAM having an embedded structure in which the memorydevices are disposed on top of the circuitry for memory reading/writing.According to the present invention, it is possible to manufacture theFeRAM on the substrate, and then dispose the devices for reading/writingon the rear surface, and hence a memory having an embedded structure forwhich manufacture has been difficult hitherto can be manufacturedeasily. Note that the memory is not limited to being a FeRAM asdescribed above, but rather application to various other memories suchas SRAMs, DRAMs, NOR type ROMs, NAND type ROMS, floating gate typenonvolatile memories, and magnetic RAMs (MRAMs) is also possible.

Seventeenth Embodiment

FIG. 32 is an enlarged view showing schematically thin filmmonocrystalline silicon minute blocks that can be used for manufacturingdevices that use a semiconductor film, which are an example oftransferred bodies that can be used in the present invention; in FIG.32, reference numeral 100 represents the thin film monocrystallinesilicon minute blocks (hereinafter referred to as the ‘monocrystallinesilicon blocks’), and reference numeral 101 represents the grainboundaries dividing the monocrystalline silicon blocks. Themonocrystalline silicon blocks 100 are formed in approximately squareshapes of side 0.1 to 10 μm, preferably about 3 μm.

The monocrystalline silicon blocks 100 can be manufactured using amethod called the μ-CZ (μ-Czochralski) method (see R. Ishihara et al.,Proceedings of SPIE, vol. 4925 (2001), p. 14). In this method, firstly athin film of amorphous silicon (a-silicon) is deposited using CVD or thelike on a substrate that is made of quartz glass or the like and has hadformed therein recessed holes 102 at suitable intervals. Next, theamorphous silicon layer is irradiated with excimer laser light, thustemporarily melting the amorphous silicon, and then cooling is allowedto take place, whereupon a thin film of polysilicon (polycrystallinesilicon) is formed on the substrate. Next, the polysilicon layer is onceagain irradiated with laser light, thus melting most of the polysilicon.During this melting, the intensity and irradiation time of the laserlight are controlled as appropriate, and hence irradiation with thelight is carried out such that only the polysilicon crystal grains inthe deepest parts of the holes 102 formed in the substrate remain,whereupon, when the molten silicon recrystallizes after the irradiationwith the light, the crystal grains remaining in the deepest parts of theholes act as seed crystals, and monocrystals grow following the crystalorientation of these seed crystals. By optimizing conditions such as thetime and temperature during the growth of the monocrystals, it ispossible to form on the substrate a silicon thin film in which aregathered together monocrystalline blocks of side a few μm. Next, using aselective silicon etching technique that is well-known in the field inquestion, the grain boundaries of the monocrystalline silicon blocks 100that have been formed are selectively etched, and hence, as shown inFIG. 32, a large number of approximately square-shaped monocrystallinesilicon blocks 100 that are separated from one another through theselectively etched grain boundaries 101 are obtained.

Regarding the monocrystalline silicon blocks 100 manufactured in thisway, the crystal orientation in each of the blocks is uniform, and thereis no degradation of electrical properties caused by the presence ofgrain boundaries, and hence the monocrystalline silicon blocks 100 haveexcellent electrical properties as semiconductors. Consequently, byforming devices using blocks comprising one or a plurality of thesemonocrystalline silicon blocks 100, devices such as TFTs having a higherperformance than conventionally can be manufactured. Moreover, accordingto the present invention, minute devices that have been manufacturedusing such minute monocrystalline silicon blocks can be transferredaccurately and efficiently into desired positions on a final substrate.

For example, by manufacturing the semiconductor film 18 of the TFT(FIGS. 7A and 8) described earlier in the first embodiment using theμ-CZ method described above, the semiconductor film 18 can be made to bea monocrystalline semiconductor film, and hence a high-performance TFTdevice can be provided.

Eighteenth Embodiment

The present eighteenth embodiment relates to an electronic appliancemanufactured using the transfer method according to one of theembodiments described above.

FIGS. 33A to 33F show examples of the electronic appliance of thepresent embodiment.

FIG. 33A shows an example of a mobile telephone manufactured using thetransfer method of the present invention; the mobile telephone 110comprises an electro-optical apparatus (display panel) 111, a voiceoutput part 112, a voice input part 113, an operating part 114, and anantenna part 115. The transfer method of the present invention isapplied, for example, to the display panel 111 and built-in circuitboards.

FIG. 33B shows an example of a video camera manufactured using thetransfer method of the present invention; the video camera 120 comprisesan electro-optical apparatus (display panel) 121, an operating part 122,a voice input part 123, and an image-receiving part 124. The transfermethod of the present invention is applied, for example, to the displaypanel 121 and built-in circuit boards.

FIG. 33C shows an example of a portable personal computer manufacturedusing the transfer method of the present invention; the computer 130comprises an electro-optical apparatus (display panel) 131, an operatingpart 132, and a camera part 133. The transfer method of the presentinvention is applied, for example, to the display panel 131 and built-incircuit boards.

FIG. 33D shows an example of a head-mounted display; the head-mounteddisplay 140 comprises an electro-optical apparatus (display panel) 141,an optical system housing part 142, and a band part 143. The transfermethod of the present invention is applied, for example, to the displaypanel 141 and built-in circuit boards.

FIG. 33E shows an example of a rear type projector manufactured usingthe transfer method of the present invention; the projector 150comprises an electro-optical apparatus (optical modulator) 151, a lightsource 152, a composite optical system 153, mirrors 154 and 155, and ascreen 157, all housed in a casing 156. The transfer method of thepresent invention is applied, for example, to the optical modulator 151and built-in circuit boards.

FIG. 33F shows an example of a front type projector manufactured usingthe transfer method of the present invention; the projector 160comprises an electro-optical apparatus (image display source) 161 and anoptical system 162, which are housed in a casing 163, and is such thatimages can be displayed on a screen 164. The transfer method of thepresent invention is applied, for example, to the image display source161 and built-in circuit boards.

The transfer method according to the present invention can be applied toall kinds of electronic appliances that use devices or circuits, withthere being no limitation to the above examples. For example, inaddition to the above, the transfer method according to the presentinvention can also be applied to fax machines having a display function,digital camera viewfinders, portable TVs, DSP apparatuses, PDAs,electronic organizers, electric signboards, displays foradvertisements/announcements, and so on.

According to the transfer method of the present invention, variousdevices can be transferred onto various final substrates. In particular,by using minute devices, it is possible to constitute an electronicappliance for which the ability to follow curvature of the finalsubstrate is excellent. By utilizing these characteristics, regardingthe electronic appliance of the present invention, application is alsopossible to various articles in addition to the electro-opticalapparatuses and memories described above.

Nineteenth Embodiment

The present nineteenth embodiment relates to an IC card, this being apreferable example of the electronic appliance in the eighteenthembodiment described above.

FIG. 34 shows a schematic perspective view of the IC card of the presentembodiment. As shown in FIG. 34, the IC card 170 comprises, on a circuitboard built into a main body 172, a display panel 171, a fingerprintdetector 173, an external terminal 174, a microprocessor 175, a memory176, communication circuitry 177, and an antenna part 178.

The built-in circuit board is manufactured using the transfer method ofthe present invention. Specifically, the display panel 171, thefingerprint detector 173, the external terminal 174, the microprocessor175, the memory 176, the communication circuitry 177 and so on are eachmade to be chips, and all or some of them are formed in integratedfashion on transfer origin substrates. The chips are transferred fromthe transfer origin substrates on which the chips have been formed intocorresponding positions on the circuit board using the transfer methodof the present invention.

The IC card of the present embodiment is thus manufactured bytransferring onto a single circuit board chips that have beenmanufactured efficiently on respectively different substrates.

Note that the transfer method of the present invention can be used inthe transfer of various chips, with there being no limitation to the ICcard described above.

For example, application is also possible to the mounting of securityICS for preventing forgery on articles such as banknotes, credit cardsand prepaid cards.

Moreover, it is also possible to transfer ICs onto a ribbon-like sheet,feed this ribbon-like sheet into a stamp-like small mounting apparatus,and then stick ICs wherever one wishes as with a stamp.

Furthermore, if minute IC chips are transferred onto any of variousarticles such as the tip of an optical fiber to form a structure able tofunction as a sensor, then novel electronic appliances can be providedin the medical and biotechnology fields.

Moreover, according to the present invention, if devices havingexcellent ability to follow curvature are transferred onto a substratehaving a curved surface, then mounting on curved displays, bodies ofautomobiles and aircraft, and so on is possible.

Furthermore, in the case of a non-contact type data communication systemthat uses microwaves, if minute ICs are transferred onto a cheap tag,then a non-contact type tag can be manufactured with a low manufacturingcost.

Moreover, by transferring minute ICs or the like onto fibers, wearablefunctional wear can also be constituted.

Industrial Applicability

According to the transfer method of the present invention, a largenumber of transferred bodies that are to be disposed on a transferdestination substrate in scattered locations with spaces therebetweencan be manufactured concentrated together on a transfer originsubstrate, and hence compared with the case that the transferred bodiesare formed on the transfer destination substrate directly, the areaefficiency in the manufacture of the transferred bodies can be greatlyimproved, and a transfer destination substrate on which a large numberof transferred bodies are disposed in scattered locations can bemanufactured efficiently and cheaply.

Moreover, according to the transfer method of the present invention, itbecomes easy to carry out selection and elimination before transfer on alarge number of transferred bodies that have been manufacturedconcentrated together on a transfer origin substrate, and hence theproduct yield can be improved.

Furthermore, according to the transfer method of the present invention,transferred bodies that are either the same as or different to oneanother can be built up on one another and combined, and hence bycombining transferred bodies that are manufactured under differentprocess conditions to one another, it is possible to provide transferredbodies having a layered structure for which manufacture has beendifficult hitherto, and moreover devices having a three-dimensionalstructure can be manufactured easily.

1. A circuit board, comprising: a plurality of first transferred bodiestransferred from a transfer origin substrate; and a partial region towhich energy is applied and corresponding to each of said firsttransferred bodies; and a transfer destination substrate receiving saidfirst transferred bodies corresponding to the partial region.
 2. Acircuit board according to claim 1, the plurality of said firsttransferred bodies received by said transfer destination substrate beingelectrically connected to one another.
 3. A circuit board according toclaim 1, the plurality of said first transferred bodies being staggeredon said transfer destination substrate, and the plurality of said firsttransferred bodies being electrically connected to one another.
 4. Acircuit board according to claim 1, one or more second transferredbodies being transferred onto and thus disposed on top of said firsttransferred bodies transferred onto said transfer destination substrate,said second transferred bodies having a smaller area than said firsttransferred bodies, and said first and second transferred bodies beingelectrically connected to one another.
 5. A circuit board, comprising: aplurality of first transferred bodies transferred from a transfer originsubstrate and an intermediate transfer substrate; and a transferdestination substrate receiving said first transferred bodiestransferred from said intermediate transfer substrate, energy beingapplied to partial regions corresponding to of said first transferredbodies transferred from at least one said transfer origin substrate andsaid intermediate transfer substrate to transfer said first transferredbodies formed in the partial regions.
 6. A circuit board according toclaim 5, the plurality of said first transferred bodies transferred ontosaid transfer destination substrate being electrically connected to oneanother.
 7. A circuit board according to claim 5, the plurality of saidfirst transferred bodies being staggered on said transfer destinationsubstrate, and the plurality of said first transferred bodies beingelectrically connected to one another.
 8. A circuit board according toclaim 5, one or more second transferred bodies being transferred ontoand thus disposed on top of said first transferred bodies transferredonto said transfer destination substrate, said second transferred bodieshaving a smaller area than said first transferred bodies, and said firstand second transferred bodies being electrically connected to oneanother.
 9. An electro-optical apparatus comprising the circuit boardaccording to claim
 1. 10. An electro-optical apparatus comprising thecircuit board according to claim
 5. 11. An electronic appliancecomprising the circuit board according to claim
 1. 12. An electronicappliance comprising the circuit board according to claim
 5. 13. An ICcard comprising the circuit board according to claim
 1. 14. An IC cardcomprising the circuit board according to claim 5.